SW4N60DC
N-channel Enhancement mode TO-251/TO-252 MOSFET
Features
High ruggedness
R
DS(ON)
(Typ 2.0Ω)@V
GS
=10V
Gate Charge (Typ 17nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED,Charge
TO-251
TO-252
BV
DSS
: 600V
I
D
: 4A
R
DS(ON)
: 2.0Ω
1
1
2
3
2
3
1
2
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
Sales Type
SW I 4N60DC
SW D 4N60DC
Marking
SW4N60DC
SW4N60DC
Package
TO251
TO252
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
147
1.17
(note 1)
Parameter
Value
TO-251
600
4*
2.5*
16
±30
170
25
5
147
1.17
TO-252
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
-55 ~ + 150
300
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
87
Oct. 2015. Rev. 2.0
Value
TO-251
0.85
TO-252
0.85
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/6
SW4N60DC
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=610V, V
GS
=0V
V
DS
=488V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
600
0.5
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 2A
V
DS
= 30 V, I
D
= 2A
2.5
2
3.3
4.5
2.2
V
Ω
S
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=480V, V
GS
=10V, I
D
=4A
(note 4,5)
V
DS
=300V, I
D
=4A, R
G
=25Ω
(note 4,5)
V
GS
=0V, V
DS
=25V, f=1MHz
586
71
7.6
12
27
ns
33
25
17
8
5
nC
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery Charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=4A, V
GS
=0V
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
366
1.9
Min.
Typ.
Max.
4
16
1.5
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 21mH, I
AS
= 4A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/6
SW4N60DC
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
3/6
SW4N60DC
Fig. 7. Maximum safe operating area（TO-251）
Fig. 8. Transient thermal response curve
（TO-251）
Fig. 9. Maximum safe operating area（TO-252）
Fig. 10. Transient thermal response curve
（TO-252）
Fig. 11. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
4/6
SW4N60DC
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
10V
V
DS
Q
GS
Q
GD
DUT
V
GS
1mA
Charge
nC
Fig. 13. Switching time test circuit & waveform
R
L
V
DS
90%
R
GS
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
5/6
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