SIK A CO.,LIMITED
B T134 Series
DESCRIPTION:
B T134 series triacs with low holding and
latching current are especially recommended
for use on middle and small resistance type
power load.
4A TRIACs
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
Value
4
600
Unit
A
V
T 2(2)
G (3)
T 1(1)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(T
j
=25℃)
Repetitive peak reverse voltage(T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40 - 150
-40 - 125
600
600
V
DRM
+ 100
V
RRM
+ 100
Unit
℃
℃
V
V
V
V
RMS on-state current
SOT-223
(T
C
=75℃)
I
T(RMS)
4
A
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B T134
Series
SIK A CO.,LIMITED
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp =10ms)
Critical rate of rise of on-state
current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
Ⅰ-Ⅱ-Ⅲ
Ⅳ
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
25
3.1
50
10
2
0.5
5
A
A
2
s
A/μs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
E
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
(dI/dt)c=1.1A/ms T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
Ⅳ
ALL
ALL
Ⅰ-Ⅲ-Ⅳ
Ⅱ
MAX
MAX
MIN
MAX
MAX
MIN
MIN
5
10
1.3
0.2
10
15
10
50
1
mA
V
V
mA
mA
V/
μs
V/
μs
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
I
TM
=5A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
Parameter
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.7
5
0.5
Unit
V
μA
mA
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-2/5-
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B T134
Series
SIK A CO.,LIMITED
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
th(j-c)
junction to case(AC)
SOT-223
4.5
℃/W
ORDERING INFORMATION
B
SIKA CO.,LIMITED
T
134
W
600
600
E
W:SOT-223
PACKAGE MECHANICAL DATA
TEL:+86-0755-89519740
-3/5-
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B T134
P(w)
6.6
5.5
4.4
3.3
2.2
1.1
0
0
Series
I
T(RMS)
(A)
6
5
4
3
2
1
I
T(RMS)
(A)
1
2
3
4
5
0
0
SIK A CO.,LIMITED
FIG.2:
RMS on-state current versus case
temperature
α=180°
FIG.1:
Maximum power dissipation versus RMS
on-state current
Tc (
℃
)
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
number of cycles
28
24
20
16
12
8
4
0
1
10
Number of cycles
100
1000
I
TSM
(A)
t=20ms
One cycle
FIG.4:
On-state characteristics (maximum
values)
30
10
I
TM
(A)
1
Tj=25℃
0.1
0
1
2
V
TM
(V)
3
←
Tj=Tjmax
SOT-223/
4
5
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms and
corresponding value of I t (
Ⅰ
-
Ⅱ
-
Ⅲ
:dI/dt < 50A/μs;
Ⅳ
:dI/dt < 10A/μs)
2
FIG.6:
Relative variations of gate trigger current
versus junction temperature
I
TSM
(A), I
2
t (A
2
s)
300
100
dI/dt(
Ⅰ
-
Ⅱ
-
Ⅲ
)
I
GT
(Tj)/I
GT
(Tj=25
℃
)
3.0
I
TSM
2.5
2.0
1.5
1.0
It
2
I
GT4
10
dI/dt(
Ⅳ
)
I
GT1
&I
GT2
0.5
10
20
0.0
-40
Tj(
℃
)
-20
0
20
40
60
80
100
I
GT3
120
140
1
0.01
tp(ms)
0.1
1
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B T134
Series
I
L
(Tj)/I
L
(Tj=25
℃
)
3.0
2.5
2.0
I
L3
I
L4
SIK A CO.,LIMITED
FIG.8:
Relative variations of latching current
versus junction temperature
FIG.7:
Relative variations of holding current
versus junction temperature
I
H
(Tj)/I
H
(Tj=25
℃
)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
Tj(
℃
)
-20
0
20
40
60
80
100
120
140
I
H1
&I
H3
1.5
1.0
0.5
0.0
-40
Tj(
℃
)
-20
0
20
40
60
80
100
I
L1
&I
L2
120
140
TEL:+86-0755-89519740
-5/5-
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