PESDNC5D12VU
ESD Protector
Description
The PESDNC5D12VU ESD protector is designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones, notebook computers, and
PDAs. They feature large cross-sectional area junctions for conducting high
transient currents,offer desirable electrical characteristics for board level
protection, such as fast response time, lower operating voltage, lower clamping
voltage and no device
degradation when compared to MLVs.
The PESDNC5D12VU protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. It gives designer the flexibility to protect one unidirectional line in
applications where arrays are not practical.
Feature
350W peak pulse power per line (t
P
= 8/20μs)
SOD-523 package
Replacement for MLV(0603)
Unidirectional configurations
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping voltage
RoHS compliant
Applications
Cell phone handsets and accessories
Personal digital assistants (PDAs)
Notebooks, desktops, and servers
Digital cameras
Peripherals
MP3 players
Transient protection for data lines to IEC 61000-4-2(ESD) ±30KV(air),
±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.2
1
www.prisemi.com
ESD Protector
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
PESDNC5D12VU
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
V
I
R
V
F
I
T
I
PP
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Reverse Stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
F
V
C
C
j
Conditions
Min.
Typ.
Max.
12
Units
V
V
μA
V
I
t
= 1mA
V
RWM
=12V T=25℃
I
F
=10mA
I
PP
=5A t
P
=8/20μS
V
R
=0V f = 1MHz
13.8
15.2
1.0
0.8
22
45
V
pF
Absolute maximum rating@25℃
Rating
Unidirectional Peak Pulse Power (t
p
=8/20μS)
Maximum Peak Pulse Current ( t
P
= 8/20μS )
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
P
pp
I
pp
T
L
T
J
T
STG
Value
350
12
260 (10 sec)
-55 to +125
-55 to +150
Units
W
A
℃
℃
℃
Rev.06.2
2
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ESD Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PESDNC5D12VU
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.2
4
www.prisemi.com
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