PNMT6N1
Transistor with N-MOSFET
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
PNMT6N1 is composed by a transistor and a MOSFET
Transistor:
Very low collector to emitter saturation voltage
DC current gain >100
3A continuous collector current
PNP epitaxial planar silicon transistor
Bottom View
MOSFET:
6
（C）
1
（E）
（C）
（E）
1
Top View
6
（C）
（B）
2
（D）
3
5
（G）
4
（S）
MOSFET Product Summary
V
DS
(V)
40
R
DS(on)
(Ω)
4.5@ V
GS
=4V
V
GS(th)
(V)
0.5 to 1.5
I
D
(A)
0.18
5
（G）
2
（B）
（D）
3
（D）
4
（S）
Transistor
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation @25°C
Storage Temperature
Max. Operating Junction Temperature
Junction-to-Ambient Thermal Resistance
(1)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
R
θJA
Conditions
I
C
=-10mA
I
C
=-0.1mA
I
E
=-0.1mA
Value
-30
-40
-5
-3
-6
-0.2
-0.5
1.2
-65~150
150
104
Units
V
V
V
A
A
A
A
W
°C
°C
°C/ W
Note 1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Rev.06.6
1
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PNMT6N1
Transistor with N-MOSFET
Absolute maximum rating@25℃
Parameter
DC Current Gain
Symbol
h
FE
Conditions
I
C
=-1mA,V
CE
=-5.0V
I
C
=-1A,V
CE
=-5.0V
I
C
=-0.1A,I
B
=-1mA
Min.
150
100
-
-
-
Typ.
Max.
Units
-
-
-0.14
-0.17
-0.31
-1.1
-0.1
-20
-0.1
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-0.5A,I
B
=-50mA
I
C
=-1A,I
B
=-100mA
V
Base-Emitter Saturation Voltage
Collector Cut-off Current (I
E
=0)
Emitter Cut-off Current(I
C
=0)
V
BE(sat)
I
CBO
I
EBO
I
C
=-1A,I
B
=-0.05mA
V
CB
=-40V
V
CB
=-30V T
C
=125°C
V
EB
=-5V
V
μA
μA
MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D
=10μA,V
GS
=0V
V
DS
=35V,V
GS
=0V
V
DS
=0V,V
GS
=±15V
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=0.2A
40
-
-
0.5
-
-
-
-
-
-
-
1
±1
1.5
4
V
μA
μA
V
Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
DSS
C
RSS
V
GS
=0V, V
DS
=25V,
f=1MHz
-
-
-
-
-
-
40
20
5
pF
pF
pF
SWITCHING PARAMETERS
Turn-On Delay Time
Turn-Off Delay Time
t
d(on)
t
d(off)
V
DS
=30V, V
GS
=10V,
R
G
=25Ω, R
L
=150Ω
I
D
=0.2A
-
-
-
-
20
20
ns
ns
Rev.06.6
2
www.prisemi.com
Transistor with N-MOSFET
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
T
A
=25℃
PNMT6N1
Symbol
V
DS
V
GS
I
D
I
D
P
D
Value
40
±20
0.18
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
1400 COMMON
EMITTER
1200 Ta=25°C
1000
800
600
400
200
0
Collector current
5 mA
4.5mA
4mA
3.5 mA
3mA
2.5mA
2mA
1.5mA
1mA
IB=0.5mA
h
FE
Ic (mA)
100
10
0.01
0.1
1
10
0
4
8
12
16
20
22
V
CE
=-1V
Fig2.DC Current Gain
Fig1.Collector-emitter voltage V
CE
(V)
V
CE(SAT)
V
BE(SAT)
0.9
% Of Rated Power
0.8
0.1
0.7
0.6
0.01
0.01
0.1
hFE=100
1
10
I
C
(A)
0.01
0.1
hFE=100
1
10
I
C
(A)
Fig 3.Collector-Emitter Saturation Voltage
Fig4. Base-Emitter Saturation Voltage
Rev.06.6
3
www.prisemi.com
Transistor with N-MOSFET
T(ns)
V
CC
=20V
500
td
400
300
200
100
0
0
0.5
1.0
1.5
h
FE
=100
2.0
2.5
3.0
I
C
(A)
tr
T(ns)
500
PNMT6N1
V
CC
=20V
Tp=40us
% Of Rated Power
h
FE
=50
h
FE
=50
Tp=40us
ts
400
300
200
100
0
0
tf
0.5
1.0
1.5
h
FE
=100
2.0
2.5
3.0
I
C
(A)
Fig 5.Switching Times Resistive Load
1.0
1.0
Fig6. Switching Times Resistive Load
0.8
I
D
– Drain Current (A)
V
GS
=4.2V
I
D
– Drain Current (A)
T=25°C
0.8
T=55°C
0.6
0.6
V
GS
=2.5V
0.4
0.4
T=125°C
0.2
0.2
V
GS
=1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain Source Voltage (V)
V
GS
– Gate to Source Voltage (V)
Fig 7. Output Characteristics
6
(Ω)
80
Fig 8. Transfer Characteristics
5
V
GS
=3.0V
60
(pF)
C
iss
r
DS(on)
– On-Resistance
4
3
V
GS
=7.0V
C – Capacitance
40
2
V
GS
=11.5V
1
20
C
Oss
C
Rss
0.0
0
0.2
0.4
0.6
0.8
1.0
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain Source Voltage (V)
Fig 9. On-Resistance vs. Drain Current
Rev.06.6
4
Fig 10. Capacitance
www.prisemi.com
Transistor with N-MOSFET
100
80
60
40
20
PNMT6N1
% Of Rated Power
0
0
25
50
75
100
125
150
Ambient Temperature - T
A
(°C)
Fig11. Power Derating Curve
Product dimension DFN-6L(2*2)
A
C
Millimeters
Dim
（6）
H
A
G
B
C
（1）
D
E
F
G
Inches
MIN
1.924
1.924
0.250
MAX
2.076
2.076
0.350
MIN
0.076
0.076
0.010
MAX
0.082
0.082
0.014
E
B
F
0.650（typ.）
0.200 MIN.
0．520
0.900
0.174
0.550
0.720
1.100
0.326
0.650
0.026（typ.）
0.008 MIN.
0.020
0.035
0.007
0.021
0.028
0.043
0.013
0.027
D
K
J
L
H
J
K
L
0.206 REF
0.203 REF
0.206 REF
0.203 REF
Rev.06.6
5
www.prisemi.com
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