PTVSHC3N18VU
Uni-directional 18V High Capacitance TVS
Description
The PTVSHC3N18VU transient voltage suppressor is designed to replace
multilayer varistors (MLVs) in portable applications such as cell phones,
notebook computers, and PDA’s. They feature large cross-sectional area
junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when
compared
to
MLVs.
The
PTVSHC3N18VU
protects
sensitive
1
2
3
semiconductor components from damage or upset due to electrostatic
discharge (ESD) and other voltage induced transient events. The
PTVSHC3N18VU is available in a DFN2×2-3L package with working
voltages of 18 volt.
Pin configuration
Feature
4000W Peak pulse power per line (t
P
= 8/20μs)
DFN2×2-3L package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to
IEC 61000-4-2(ESD)±30KV(air), ±30KV(contact);
IEC 61000-4-4 (EFT) 80A (5/50ns),
IEC 61000-4-5 (Lightning) 138A (8/20us)
Pin1, 2
Circuit Diagram
Pin 3
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Marking (Top View)
T18
018
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 3 requirements
Pure tin plating: 7 ~ 17 um
1
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Rev.06.5
Transient Voltage Suppressor
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
PTVSHC3N18VU
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
V
I
R
V
F
I
T
I
PP
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
j
Conditions
Min.
Typ.
Max.
18
Units
V
V
μA
V
V
pF
I
t
=1mA
V
RWM
=18V
I
PP
=30A
I
PP
=138A
V
R
=0V
t
P
= 8/20μs
t
P
= 8/20μs
f = 1MHz
19
20
-
1
24
31
700
900
26
33
1100
Notes
：Measured
from pin 3 to pin 1 and pin 2.
Absolute maximum rating@25℃
Rating
Peak Pulse Power (t
p
=8/20μs)
Peak Pulse Current (t
p
=8/20μs)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
P
pp
I
pp
T
L
T
J
T
STG
Value
4000
138
260 (10 sec)
-55 to 150
-55 to 150
Units
W
A
℃
℃
℃
Rev.06.5
2
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Transient Voltage Suppressor
Typical Characteristics
I
PP
100
80
60
40
20
0
t
f
=8μs
100
80
60
40
20
0
PTVSHC3N18VU
I
PP
– Peak Pulse Current - % of
t
P
=20μs(I
PP
/2)
% Of Rated Power
0
5
10
Fig 1.Pulse Waveform
40
Pulse waveform: tp=8/20us
1000
15
t - Time -μs
20
25
30
0
25
Fig 2.Power Derating Curve
50
75
100
T
L
– Lead Temperature -
℃
125
150
f=1MHz
800
C-Junction capacitance (pF)
30
V
C
-Clamping Voltage (V)
600
20
400
10
200
0
0
30
60
90
120
150
I
PP
-Peak pulse current (A)
0
0
5
10
V
R
-Reverse voltage (V)
15
20
Fig 3. Clamping voltage vs. Peak pulse current
10000
Fig 4. Capacitance vs. Reveres voltage
Peak Pulse Power (W)
1000
100
10
1
10
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.5
3
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100
Pulse Duration(us)
1000
Transient Voltage Suppressor
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PTVSHC3N18VU
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.5
4
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Transient Voltage Suppressor
Product dimension (DFN2×2-3L)
PTVSHC3N18VU
Dim
A
D
D1
E
E1
e
L1
k
L2
h
c
A1
Millimeters
MIN
0.50
1.90
1.40
1.90
0.95
Typ.
0.58
2.00
1.50
2.00
1.05
1.30BSC
MAX
0.66
2.10
1.60
2.10
1.15
0.35
0.20
0.20
0.25
0.40
0.30
0.25
0.30
0.15BSC
0.45
0.40
0.30
0.35
0.00
0.02
0.05
Ordering information
Device
PTVSHC3N18VU
Rev.06.5
Package
DFN2×2-3L (Pb-Free)
5
Reel
7"
Shipping
3000 / Tape & Reel
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stm32/stm8
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