PTVSHC2EN4V5B
Transient Voltage Suppressor
Description
The PTVSHC2EN4V5B ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PTVSHC2EN4V5B protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced transient
events. The PTVSHC2EN4V5B is available in a DFN1610-2L package with working
voltages of 4.5 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2,
(±30kV air, ±30kV contact discharge)
1
2
Feature
1200W Peak pulse power per line (t
P
= 8/20μs)
DFN1610-2L package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.4
1
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Transient Voltage Suppressor
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
PTVSHC2EN4V5B
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
V
C
V
BR
V
RWM
I
T
I
R
I
PP
I
V
I
R
I
T
V
RWM
V
BR
V
C
I
PP
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Reverse Zener Voltage
Reverse Working Voltage
(1)
Breakdown Voltage(PIN1~PIN2)
Reverse Leakage
Current(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Junction Capacitance
Symbol
V
Z
V
RWM
V
BR
I
R
V
C
V
C
V
C
V
C
C
j
Conditions
I
ZT
= 5mA
Min.
Typ.
5.1
Max.
Units
V
4.5
I
t
=1mA
V
RWM
=4.5V
I
PP
=20A
I
PP
=45A
I
PP
=90A
I
PP
=130A
V
R
=0V
t
P
= 8/20μs
t
P
= 8/20μs
t
P
= 8/20μs
t
P
= 8/20μs
f = 1MHz
6.5
7.5
9.5
10
300
4.6
6.1
2
8
9
12
13
350
V
V
μA
V
V
V
V
pF
Note 1: V
RWM
is the maximum reverse working voltage, or reverse stand-off voltage. ESD can protect signal line properly
within its rated voltage. If the signal line's voltage is over V
RWM
, ESD will change to other state.
Absolute maximum rating@25℃
Rating
Peak Pulse Power ( t
P
= 8/20μS )
Total Device Dissipation FR-5 Board
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Rev.06.4
Symbol
P
pp
P
D
T
L
T
J
T
STG
2
Value
1200
500
260 (10 sec)
-55 to +150
-55 to +150
Units
W
mW
℃
℃
℃
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Transient Voltage Suppressor
Typical Characteristics
I
PP
100
80
60
40
20
0
t
f
=8μs
100
80
60
40
20
0
PTVSHC2EN4V5B
I
PP
– Peak Pulse Current - % of
t
P
=20μs(I
PP
/2)
% Of Rated Power
0
5
10
15
t - Time -μs
20
25
30
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
Fig 2.Power Derating Curve
28
Pulse waveform: tp=8/20us
21
C-Junction capacitance (pF)
V
C
-Clamping Voltage (V)
375
300
225
150
75
0
14
7
0
0
30
Fig 3. Clamping voltage vs. Peak pulse current
60
90
120
I
PP
-Peak pulse current (A)
150
0
1
2
3
V
R
-Reverse voltage (V)
4
5
Fig 4. Capacitance vs. Reveres voltage
10000
Peak Pulse Power (W)
1000
100
10
1
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.4
3
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10
100
Pulse Duration(us)
1000
Transient Voltage Suppressor
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PTVSHC2EN4V5B
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.4
4
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Transient Voltage Suppressor
Product dimension (DFN1610-2L)
D
L
PTVSHC2EN4V5B
E
b
2
1
h
h
Bottom View
e
A
C
A1
Dim
A
A1
b
c
D
e
E
L
h
Millimeters
MIN
0.45
--
0.75
0.10
1.55
1.10BSC
0.95
0.35
0.15
1.05
0.45
0.25
MAX
0.60
0.05
0.85
0.20
1.65
0.6
0.625
1.0
1.225
1.85
Recommended Soldering Pad
Unit:mm
Ordering information
Device
PTVSHC2EN4V5B
Rev.06.4
Package
DFN1610-2L (Pb-Free)
5
Shipping
3000 / Tape & Reel
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stm32/stm8
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