PPMT30V4
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
MOSFET Product Summary
V
DS
(V)
-30
R
DS(on)
(Ω )
0.053 @ V
GS
=-10V
0.065@ V
GS
=-4.5V
I
D
(A)
-4.2
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D
=-250μA,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
=0V,V
GS
=±
12V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-2A
Forward Trans conductance
gFS
V
GS
=-5V, I
D
=-5A, T
A
=125℃
7
-30
-
-
-0.7
-
-
53
65
86
11
-
-
-
-
-1
±
100
-1.3
60
75
120
V
μA
nA
V
mΩ
mΩ
mΩ
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
DSS
C
RSS
V
GS
=0V, V
DS
=-15V,
f=1MHz
-
-
-
950
110
75
pF
pF
pF
SWITCHING PARAMETERS
Turn-On Delay Time
Turn-Off Delay Time
t
d(on)
t
d(off)
V
DD
=-15V, V
GS
=-10V,
R
L
=3.6Ω, R
G
=6Ω
-
-
20
35
ns
ns
Absolute maximum rating@25℃
Parameter
Thermal Resistance, Junction-to-Ambient (Note 2)
Symbol
R
θJA
Value
104
Units
℃/W
Rev.06.2
1
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P-Channel MOSFET
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I
D
P
D
T
J
,T
STG
-30
1.2
-55 To 150
PPMT30V4
Symbol
V
DS
V
GS
I
D
Value
-30
±
12
-4.2
Units
V
V
A
A
W
℃
Typical Characteristics
1.75
4.8
T
A
=-25℃
1.5
I
D
– Drain Current (A)
0
20
40
60
80
100
120
140
3.6
P
D
Power (W)
1
2.4
0.5
1.2
0
0
0
20
40
60
80
100
120
140
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Fig 1. Power Dissipation
140
Fig 2. Drain Current
25
-10V
Rdson On-Resistance(mΩ)
20
I
D
- Drain Current (A)
120
-4.5V
V
GS
=-2.5V
100
15
-2.5V
10
80
V
GS
=-4.5V
60
V
GS
=-2V
5
40
V
GS
=-10V
0
0
1
2
3
4
5
Vds Drain-Source Voltage (V)
20
0
2
4
6
I
D
- Drain Current (A)
8
10
Fig 3. Output Characteristics
Rev.06.2
2
Fig 4. Drain-Source On-Resistance
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P-Channel MOSFET
10
V
DS
=-5V
8
Normalized On-Resistance
I
D
– Drain Current (A)
1.6
V
GS
=-4.5V
1.4
V
GS
=-10V
1.8
PPMT30V4
6
125℃
4
25
℃
2
1.2
V
GS
=-2.5V
1
0
0
20
40
60
100
120
140
0.8
0
25
50
75
100
125
150
175
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Fig 5.Transfer Characteristics
165
145
I
D
=-4.2A
Rdson On -Resistance(mΩ)
C Capacitance (pF)
125
1000
1400
1200
Fig 6. Transfer Characteristics
Ciss
800
600
400
Coss
200
Crss
105
85
65
45
0
2
4
6
8
10
125℃
25℃
0
0
20
40
60
100
120
140
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Fig. 7 Rdson vs Vgs
5
V
DS
=-15V
I
D
=14.2A
4
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
10
Fig.8 Capacitance vs Vds
T
J
=150℃
T
J
=150℃
1
3
125℃
2
T
J
=-50℃
25
℃
1
0
0
0.1
2
4
6
8
10
12
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Fig. 9 Gate Charge
Rev.06.2
3
Fig.10 Source- Drain Diode Forward
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P-Channel MOSFET
100
T
J(Max)
=150℃
T
A
=25℃
10us
I
D
– Drain Current (A)
R
DS(ON)
limited
10.0
100us
1ms
0.1s
10ms
1.0
1s
10s
DC
0.1
0.1
1
10
Vds Drain-Source Voltage (V)
100
PPMT30V4
Fig. 11 Safe Operation Area
10
r(t),Normalized Effective
Transient Thermal Impedance
D=Ton/T
T
J
,
PK
=T
A
+P
DM
.Z
θJA.
R
θJA
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
R
θJA=
104℃/W
1
P
D
0.1
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pluse Duration(sec)
Fig.12 Normalized Maximum Transient Thermal Impedance
Rev.06.2
4
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P-Channel MOSFET
Product dimension(SOT-23)
A
θ
PPMT30V4
(3)
C
B
(1)
(2)
D
F
J
L
E
H
G
K
Millimeters
Dim
MIN
A
B
C
D
E
F
G
H
J
K
L
θ
2.80
1.20
2.10
0.89
0.45
1.78
0.085
0.45
0.37
0.89
0.013
0°
Inches
MAX
3.04
1.40
2.50
1.02
0.60
2.04
0.177
0.60
0.50
1.11
0.100
10°
MIN
0.1102
0.0472
0.0830
0.0350
0.0177
0.0701
0.0034
0.0180
0.0150
0.0350
0.0005
0°
MAX
0.1197
0.0551
0.0984
0.0401
0.0236
0.0807
0.0070
0.0236
0.0200
0.0440
0.0040
10°
Rev.06.2
5
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