PNM723T30V01
N-Channel MOSFET
Description
PNM723T30V01 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
MOSFET Product Summary
V
DS
(V)
30
R
DS(on)
(Ω)
7@ V
GS
=2.5V,I
D
=10mA
V
GS(th)
(V)
0.5 to 1.5
I
D
(A)
0.1
D（3）
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Conditions
I
D
=10μA,V
GS
=0V
V
DS
=30V,V
GS
=0V
V
DS
=0V,V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=2.5V, I
D
=1mA
Min.
30
-
-
0.5
Typ.
-
-
-
-
6.5
7
Max.
-
1
±1
1.5
9
9
6
5
-
1
Units
V
μA
μA
V
Ω
Ω
Ω
Ω
S
V
OFF CHARACTERISTICS
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=2.5V, I
D
=10mA
V
GS
=4V, I
D
=10mA
V
GS
=10V, I
D
=100mA
-
-
-
4
3
0.2
0.75
Forward Transconductance
Source-Drain Diode Forward Voltage
g
FS
VFSD (V)
V
DS
=5V, I
D
=0.1A
ID=100mA,VGS=0V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
GS
=0V, V
DS
=25V,
f=1MHz
-
-
-
-
-
-
40
10
5
pF
pF
pF
Rev.06.0
1
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N-Channel MOSFET
PNM723T30V01
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Symbol
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
Conditions
Min.
Typ.
Max.
0.5
0.2
0.2
Units
nC
nC
nC
ns
ns
ns
ns
SWITCHING PARAMETERS
V
GS
=4.5V, V
DS
=6V,
I
D
=0.1A
-
V
DS
=30V, V
GS
=10V,
R
G
=25Ω,
RL=150Ω,I
D
=0.1A
-
-
-
3
3.5
5
2.5
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
T
A
=25℃
Symbol
V
DS
V
GS
I
D
I
D
P
D
Value
30
±20
0.10
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
1.0
0.6
V
GS
=10V
Drain-to-Source Current: I
D
(A)
Drain-to-Source Current: I
D
(A)
0.8
V
DS
=5V
0.4
0.6
0.4
V
GS
=4V
0.2
0.2
T
J
=125℃
V
GS
=2.5V
0
T
J
=25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source Voltage :V
DS
(V)
0.0
1.0
2.0
3.0
4.0
5.0
Gate-to-Source Voltage :V
GS
(V)
Fig 1. On-Region Characteristics
Rev.06.0
2
Fig 2. Transfer Characteristics
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N-Channel MOSFET
5
10
PNM723T30V01
V
DS
=6V
I
D
=0.1A
V
GS
=4V
Gate to Source Voltage :V
GS
(V)
8
4
On-Resistance：Rdson (mΩ)
3
V
GS
=10V
6
2
4
1
2
0
0
0.2
0.4
0.6
Drain Current: ID(A)
0.8
1.0
0
0
0.1
0.2
0.3
0.4
Total Gate Charge: Qg (nC)
0.5
0.6
Fig 3. On-Resistance v.s. Drain Current and Gate Voltage
1000
10
Fig 4. Gate Charge Characteristics
I
D
=0.1A
8
100
On-Resistance: R
DSON
(mΩ)
T
J
=125℃
Capacitance(pF)
C
ISS
6
T
J
=25℃
4
10
C
OSS
2
C
RSS
1
0.1
1
10
Drain to Source Voltage: V
DS
(V)
30
0
6
7
9
8
Gate-to-Source Voltage: V
GS
(V)
10
Fig 5. Capacitance Characteristic
10
Normalized Drain to Source On-Resistance
1.8
Fig 6. On-Resistance vs. Gate-to-Source Voltage
V
GS
=4V
I
D
=10mA
V
GS
=2.5V
I
D
=10mA
Source Current: I
S
(A)
1
T
J
=125℃
1.4
0.1
T
J
=25℃
0.01
1.0
0.6
0.001
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature: T
J
(℃)
Source-to-Drain Voltage: V
SD
(V)
Fig 7. Normalized On-Resistance vs. Junction Temperature
Rev.06.0
3
Fig 8. Body diode forward voltage
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N-Channel MOSFET
PNM723T30V01
IMPORTANT NOTICE
and
are registered trademarks of
Prisemi Electronics Co., Ltd (Prisemi)
,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
Rev.06.0
5
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