PTVSHC3D12VUH
Uni-directional 12V High Capacitance TVS Protector
Description
The PTVSHC3D12VUH TVS protector is designed to replace multilayer
varistors (MLVs) in portable applications such as cell phones, notebook
computers, and PDA’s. They feature large cross-sectional area junctions for
conducting high transient currents, offer desirable
electrical characteristics
for board level protection, such as fast response time, lower operating
voltage, lower clamping voltage and no device degradation when compared
to
MLVs.
The
PTVSHC3D12VUH
protects
sensitive
semiconductor
components from damage or upset due to electrostatic discharge (ESD) and
other voltage induced transient events. The PTVSHC3D12VUH is available
in a SOD-323 package with working voltages of 12 volt.
SOD-323(Top View)
Feature
2000W Peak pulse power per line (t
P
= 8/20μs)
SOD-323 package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Circuit Diagram
Pin1
Pin2
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
Pin1
H12
Marking (Top View)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.3
1
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TVS Protector
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
PTVSHC3D12VUH
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
V
I
R
V
F
I
T
I
PP
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
j
Conditions
Min.
Typ.
Max.
12
Units
V
V
μA
V
pF
I
t
=1mA
V
RWM
=12V
I
PP
=80A
V
R
=0V
t
P
= 8/20μs
f = 1MHz
13
14
15.5
1
26
340
395
30
450
Absolute maximum rating@25℃
Rating
Peak Pulse Power ( t
P
= 8/20μS )
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
P
pp
T
L
T
J
T
STG
Value
2000
260 (10 sec)
-55 to 125
-55 to 150
Units
W
℃
℃
℃
Rev.06.3
2
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TVS Protector
Typical Characteristics
I
PP
100
80
60
40
20
0
t
f
=8μs
100
80
60
40
20
0
PTVSHC3D12VUH
I
PP
– Peak Pulse Current - % of
t
P
=20μs(I
PP
/2)
% Of Rated Power
0
5
10
15
t - Time -μs
20
25
30
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
40
Pulse waveform: tp=8/20us
360
V
C
-Clamping Voltage (V)
C-Junction capacitance (pF)
30
450
Fig 2.Power Derating Curve
f=1MHz
270
20
180
10
90
0
0
0
16
32
48
64
I
PP
-Peak pulse current (A)
80
88
0
3
6
9
V
R
-Reverse voltage (V)
12
13.5
Fig 3. Clamping voltage vs. Peak pulse current
10000
Fig 4. Capacitance vs. Reveres voltage
Peak Pulse Power (W)
1000
100
10
1
10
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.3
3
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100
Pulse Duration(us)
1000
TVS Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PTVSHC3D12VUH
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.3
4
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