PESDXC2FD5VU
Ultra Small ESD Protector
Description
The PESDXC2FD5VU ESD protector is designed to replace multilayer varistors(MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PESDXC2FD5VU protects sensitive semiconductor components from damage
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The PESDXC2FD5VU is available in a DFN1006-2L package with working voltages of 5
volt. It gives designer the flexibility to protect one unidirectional line in applications where
arrays are not practical. Additionally, it may be
“
sprinkled
”
applications where board space is at a premium.
around the board in
1
Top view
2
Feature
Ultra low capacitance 0.5pF
DFN1006-2L package
Replacement for MLV(0402)
Unidirectional configurations
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
±25KV (air), ±20KV (contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.6
1
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Ultra Small ESD Protector
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
PESDXC2FD5VU
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
I
F
I
V
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
F
V
C
V
C
C
j
Conditions
Min.
Typ.
Max.
5.0
Units
V
V
μA
V
V
V
pF
I
t
=1mA
V
RWM
=5V
I
F
=10mA
I
PP
=1A
I
PP
=6.5A
V
R
=0V
t
P
= 8/20μS
t
P
= 8/20μS
f = 1MHz
5.4
7.0
8.5
1.0
0.8
8.5
14.0
0.5
1.25
9.2
16.0
0.65
Absolute maximum rating@25℃
Rating
Peak Pulse Power (t
p
=8/20μs)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
P
pp
T
L
T
J
T
STG
Value
100
260(10 sec)
-55 to 125
-55 to 150
Units
W
℃
℃
℃
Rev.06.6
2
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Ultra Small ESD Protector
Typical Characteristics
100
80
60
40
20
0
t
f
=8μs
100
80
60
40
20
0
PESDXC2FD5VU
I
PP
– Peak Pulse Current - % of
I
PP
t
P
=20μs(I
PP
/2)
% Of Rated Power
0
5
10
15
t - Time -μs
20
25
30
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
Fig 2.Power Derating Curve
18
15
V
C
-Clamping Voltage (V)
12
9
6
3
0
Pulse waveform: tp=8/20us
C-Junction capacitance (pF)
1
0.8
0.6
f=1MHz
0.4
0.2
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
IPP-Peak pulse current (A)
V
R
-Reverse voltage (V)
Fig 3. Clamping voltage vs. Peak pulse current
Fig 4. Capacitance vs. Reveres voltage
20
18
16
14
Current (A)
12
10
8
6
4
2
RD=0.73
Ω
1000
Peak Pulse Power (W)
20
24
26
100
10
1
0
4
8
12
Voltage
16
(V)
1
10
100
Pulse Duration(us)
1000
Fig 5. TLP Measurement
Rev.06.6
3
Fig 6. Non Repetitive Peak Pulse Power vs. Pulse time
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Ultra Small ESD Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PESDXC2FD5VU
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.6
4
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