PESDHC2FD5VBH
ESD Protector
Description
The PESDHC2FD5VBH protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. They feature large cross-sectional area junctions for conducting
high transient currents, offer desirable electrical characteristics for board level
protection, such as fast response time, low operating voltage. It gives designer
the flexibility to protect one bi-directional line in applications where arrays are not
practical.
1
2
Feature
300W peak pulse power per line (t
P
= 8/20μs)
DFN1006-2L package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±
30KV(air), ±
30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Surge) 36A (8/20us)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronics Parameter
Symbol
V
RWM
I
R
V
TRIG
V
HOLD
I
T
I
PP
V
C
P
PP
C
J
I
F
V
F
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Reverse trigger Current
Reverse holding voltage
V
C
V
HOLD
V
TRIG
V
RWM
I
T
I
R
I
PP
I
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
Forward Current
Forward Voltage @ I
F
I
R
I
T
V
RWM
V
HOLD
V
C
V
TRIG
V
I
PP
Rev.06.1
1
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ESD Protector
PESDHC2FD5VBH
Electrical characteristics per line@25℃ (unless otherwise specified)
Parameter
Peak Reverse Working
Voltage(PIN1~PIN2)
Breakdown Voltage(PIN1~PIN2)
Reverse Leakage Current(PIN1~PIN2)
Breakdown Voltage (PIN2~PIN1)
Reverse Leakage Current(PIN2~PIN1)
Clamping Voltage(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Clamping Voltage(PIN1~PIN2)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
BR
I
R
V
C
V
C
V
C
C
j
Conditions
Min.
Typ.
Max.
5
Units
V
V
μA
V
μA
V
V
V
pF
I
t
=1mA
V
RWM
= 5V T=25℃
I
t
=1mA
V
RWM
= 4.5V T=25℃
I
PP
=1A
I
PP
=15A
I
PP
=33A
V
R
=0V
f = 1MHz
5.4
6.5
1.0
4.6
5.5
1.0
6
7.2
9.5
8
9
11
90
70
80
Absolute maximum rating@25℃
Rating
Peak Pulse Power (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Symbol
P
pp
T
J
T
STG
Value
300
-55 to +150
-55 to +150
Units
W
℃
℃
Typical Characteristics
t
f
=8μs
I
PP
– Peak Pulse Current - % of I
PP
100
% Of Rated Power
80
60
t
P
=20μs(I
PP
/2)
40
20
0
0
5
10
15
t - Time -μs
20
25
30
100
80
60
40
20
0
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
Fig 2.Power Derating Curve
Rev.06.1
2
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ESD Protector
20
7
Breakdown Voltage (V) (V
Z
@ I
Z
)
16
6.5
6.0
I
R
(nA)
12
PESDHC2FD5VBH
8
5.5
4
5.0
4.5
-55
0
+25
Temperature (º
C)
+150
0
25
50
75
100
125
150
Temperature (º
C)
Fig 3.Typical Breakdown Voltage vs. Temperature
Fig 4.Typical Leakage Current vs. Temperature
20.0
10000
V
C
-Clamping Voltage (V)
15.0
Pulse waveform: tp=8/20us
Peak Pulse Power (W)
1000
10.0
100
5.0
0
0
9.5
19
28.5
38
IPP-Peak pulse current (A)
10
1
10
100
Pulse Duration(us)
1000
Fig 5. Clamping voltage vs. Peak pulse current
20
Fig 6. Non-Repetitive Peak Pulse Power vs. Pulse time
12
TLP Current(A)
4
-4
-12
Z
0
=50Ω
t
r
=2ns
t
p
=100ns
-8
-4
0
TLP Voltage(v)
4
8
-20
Fig 7. TLP Measurement
Rev.06.1
3
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ESD Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PESDHC2FD5VBH
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Product dimension (DFN1006-2L)
A
Inches
Dim
MIN
B
C
A
B
C
D
0.013
0.000
0.037
0.021
0.017
0.007
Millimeters
MIN
0.34
0.00
0.95
0.55
0.45
0.20
MAX
0.020
0.002
0.042
0.026
0.021
0.011
MAX
0.50
0.05
1.075
0.675
0.55
0.30
D
R
E
E
F
H
R
0.015Typ.
0.001
0.005
0.40Typ.
0.05
0.15
F
Rev.06.1
H
4
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ESD Protector
PESDHC2FD5VBH
1.10
0.60
0.40
Unit:mm
Ordering information
Device
PESDHC2FD5VBH
Package
DFN1006-2L (Pb-Free)
Shipping
10000 / Tape & Reel
Rev.06.1
5
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