PTVSHC3D4V5B
ESD Protector
Description
The PTVSHC3D4V5B ESD protector is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature
large cross-sectional area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast response time, lower
operating voltage, lower clamping voltage and no device degradation when compared to
MLVs. The PTVSHC3D4V5B protects sensitive semiconductor components from damage
or upset due to electrostatic discharge (ESD) and other voltage induced transient events.
The PTVSHC3D4V5B is available in a SOD-323 package with working voltages of 4.5 volt.
It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±
30kV air, ±30kV
contact discharge)
1
2
Feature
2400W Peak pulse power per line (t
P
= 8/20μs)
SOD-323 package
Response time is typically < 1 ns
Protect one I/O or power line
Low clamping Voltage
RoHS compliant
Transient protection for data lines to IEC 61000-4-2(ESD)
Applications
Cell phone handsets and accessories
Personal digital assistants (PDA’s)
Notebooks, desktops, and servers
Portable instrumentation
Cordless phones
Digital cameras
Peripherals
MP3 players
±
30KV(air), ±
30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Rev.06.3
1
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ESD Protector
Electronics Parameter
Symbol
V
RWM
I
R
V
BR
I
T
I
PP
V
C
P
PP
C
J
PTVSHC3D4V5B
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Peak Pulse Power
Junction Capacitance
V
C
V
HOLD
V
TRIG
V
RWM
I
T
I
R
I
PP
I
I
R
I
T
V
RWM
V
HOLD
V
C
V
TRIG
V
I
PP
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Reverse Zener Voltage
Reverse Working Voltage
(1)
Symbo
l
V
Z
V
RWM
V
BR
I
R
V
C
V
C
V
C
V
C
C
j
Conditions
I
ZT
= 5mA
Min.
Typ.
5.1
Max.
Units
V
4.5
I
t
=1mA
V
RWM
=4.5V
I
PP
=20A
I
PP
=45A
I
PP
=90A
t
P
= 8/20μs
t
P
= 8/20μs
t
P
= 8/20μs
8.5
11
18
21
260
4.6
2
11
14
21
24
300
V
V
μA
V
V
V
V
pF
Breakdown Voltage(Pin1 to Pin2)
Reverse Leakage Current
(Pin1 to Pin2)
Clamping Voltage(Pin1 to Pin2)
Clamping Voltage(Pin1 to Pin2)
Clamping Voltage(Pin1 to Pin2)
Clamping Voltage(Pin1 to Pin2)
Junction Capacitance
I
PP
=130A t
P
= 8/20μs
V
R
=0V
f = 1MHz
Note 1: V
RWM
is the maximum reverse working voltage, or reverse stand-off voltage. ESD can protect signal line properly
within its rated voltage. If the signal line's voltage is over V
RWM
, ESD will change to other state.
Absolute maximum rating@25℃
Rating
Peak Pulse Power ( t
P
= 8/20μS )
Total Device Dissipation FR-5 Board
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Rev.06.3
2
Symbol
P
pp
P
D
T
L
T
J
T
STG
Value
2400
500
260 (10 sec)
-55 to +150
-55 to +150
Units
W
mW
℃
℃
℃
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ESD Protector
Typical Characteristics
I
PP
– Peak Pulse Current - % of I
PP
100
t
f
=8μs
100
80
PTVSHC3D4V5B
% Of Rated Power
80
60
t
P
=20μs(I
PP
/2)
40
60
40
20
20
0
0
5
10
15
t - Time -μs
20
25
30
0
0
25
50
75
100
125
150
T
L
– Lead Temperature -
℃
Fig 1.Pulse Waveform
Fig 2.Power Derating Curve
28
Pulse waveform: tp=8/20us
C-Junction capacitance (pF)
375
f=1MHz
300
V
C
-Clamping Voltage (V)
21
225
14
150
7
75
0
0
0
30
60
90
120
I
PP
-Peak pulse current (A)
150
0
1
2
3
V
R
-Reverse voltage (V)
4
5
Fig 3. Clamping voltage vs. Peak pulse current
Fig 4. Capacitance vs. Reveres voltage
10000
Peak Pulse Power (W)
1000
100
10
1
10
100
Pulse Duration(us)
1000
Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time
Rev.06.3
3
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ESD Protector
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg.
℃/sec
280
PTVSHC3D4V5B
240
200
160
120
80
40
0
0
30
60
90
120
150
180
210
240
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Rev.06.3
4
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ESD Protector
Product dimension (SOD-323)
PTVSHC3D4V5B
C
A
E
B
Inches
Dim
MIN
A
B
C
D
0.063
0.045
0.090
0.031
0.010
0.004
0.000
Millimeters
MIN
1.60
1.15
2.30
0.80
0.25
0.09
0.00
MAX
0.075
0.057
0.106
0.043
0.01
0.007
0.004
MAX
1.90
1.45
2.70
1.00
0.40
0.18
0.10
F
H
E
D
F
H
3.00
0.40
0.50
Unit:mm
Ordering information
Device
PTVSHC3D4V5B
Package
SOD-323 (Pb-Free)
Shipping
3000 / Tape & Reel
Rev.06.3
5
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