PESDU0771D1F
1-Line Uni-directional TVS Diode
Description
The PESDU0771D1F is an uni-directional TVS diode,
utilizing leading monolithic silicon technology to provide
fast response time and low ESD clamping voltage,
making this device an ideal solution for protecting
voltage
sensitive
data
and
power
lines.
The
PESDU0771D1F complies with the IEC 61000-4-2
(ESD) with ±
30kV air and ± 30kV contact discharge. It is
assembled into a SOD-123FL lead-free package. The
small size and high ESD/surge protection make
PESDU0771D1F an ideal choice to protect cell phone,
digital cameras, audio players and many other portable
applications.
Mechanical Characteristics
Package: SOD-123FL
Lead Finish: Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
Fast-charge battery chargers
Power management system
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
Features
Protects one data or power line
Ultra low leakage: nA level
Operating voltage: 7V
Ultra low clamping voltage
Complies with following standards:
–IEC
61000-4-2 (ESD) immunity test
Air discharge: ±
30kV
Contact discharge: ±
30kV
–IEC61000-4-5
(Lightning) 200A (8/20μs)
RoHS Compliant
Marking Information
7A
.
Pin Configuration
7A.=
Device Marking Code
Ordering Information
Real
Size
7 inch
Part Number
PESDU0771D1F
Circuit and Pin Schematic
Packaging
3000/Tape & Reel
Rev.02.1806
Copyright © 2014 PN-Silicon Co., Ltd
www.pn-silicon.com
1
/
4
PESDU0771D1F
Absolute Maximum Ratings (T
A
=25° unless otherwise specified)
C
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
Storage Temperature Range
V
ESD
T
J
T
stg
Symbol
P
pk
I
pp
Value
3600
200
±30
±30
−55 to +125
−55 to +150
Unit
W
A
kV
°
C
°
C
Electrical Characteristics (T
A
=25° unless otherwise specified)
C
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Min
Typ
Max
7
Unit
V
V
Test Condition
7.5
6
9
22.5
800
I
T
= 1mA
V
RWM
= 7V
I
PP
= 5A (8 x 20µs pulse)
I
PP
= 200A (8 x 20µs pulse)
V
R
= 0V, f = 1MHz
uA
V
V
pF
Rev.02.1806
Copyright © 2014 PN-Silicon Co., Ltd
www.pn-silicon.com
2
/
4
PESDU0771D1F
Typical Performance Characteristics (T
A
=25° unless otherwise Specified)
C
700
1000
Junction Capacitance_Cj (pF)
600
500
400
300
200
100
0
0
1
2
3
4
5
6
7
1
0.1
1
10
100
Peak Power_Ppp(kW)
100
10
Reverse Voltage_V
R
(V)
Pulse Duration_tp(uS)
Junction Capacitance vs. Reverse Voltage
120
100
Peak Pulse Power vs. Pulse Time
28
Clamping Voltage_Vc（V）
24
20
16
12
8
4
0
0
40
80
120
160
200
240
% of Rated Power
80
60
40
20
0
0
20
50
75
100
125
150
Peak Pulse Current_Ipp (A)
Ambient Temperature_Ta(℃)
Clamping Voltage vs. Peak Pulse Current
Power Derating Curve
110
% of Peak Pulse Current
100
90
80
70
60
50
40
30
20
10
0
0
10
Time_t(μS)
20
30
CH1
5.0V
M 10.0ns
ESD Clamping Voltage
8 X 20uS Pulse Waveform
8 kV Contact per IEC61000−4−2
Rev.02.1806
Copyright © 2014 PN-Silicon Co., Ltd
www.pn-silicon.com
3
/
4
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
