PJM2300NSA
N-Channel MOSFET
Feature
⚫
⚫
TrenchFET Power MOSFET
Excellent R
DS(on)
and Low Gate Charge
SOT-23
Applications
⚫
⚫
Load Switch for Portable Devices
DC/DC Converter
Marking: M02
1. Gate
2.Source
3.Drain
Schematic diagram
3Drain
1
Gate
2
Source
Absolute Maximum Ratings
Ratings at T
A
=25℃ unless otherwise specified.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Note2
Note1
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Maximum
20
±12
4.5
Units
V
V
A
18
0.35
150, -55 to 150
W
°C
Symbol
R
θJA
Typ.
357
Units
°C/W
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PJM2300NSA
N-Channel MOSFET
Electrical Characteristics (T
C
= 25℃)
Parameter
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Note3
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=3A
Note3
Symbol
Conditions
Min.
Typ.
Max.
Units
20
--
--
0.45
--
--
--
--
--
--
--
--
--
--
--
5
--
1
±100
1
32
40
70
--
V
µA
nA
V
mΩ
mΩ
mΩ
S
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=2.5V, I
D
=2A
V
GS
=1.8V, I
D
=2A
Forward Transconductance
Note3
Dynamic Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total gate charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
g
FS
V
DS
=10V, I
D
=6A
C
iss
C
oss
C
rss
V
GS
=0V, V
DS
=8V, f=1MHz
--
--
--
523
99
75
--
--
--
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
V
DS
=10V, V
GS
=4.5V
I
D
=1A, R
GEN
=6Ω
V
GS
=4.5V, V
DS
=10V,I
D
=6A
--
--
--
--
--
--
--
6.4
1.8
1.3
10.5
4.5
27.5
4.3
8.2
2.3
1.9
21
9
55
8.6
nC
nC
nC
ns
ns
ns
ns
Drain-Source Diode Characteristics
Body Diode Forward Voltage
V
SD
I
S
=1.7A, V
GS
=0V
--
--
1.2
V
Note:
1.Repetitive
rating : Pulse width limited by junction temperature.
2.Surface
mounted on FR4 board, t≤10s.
3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
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PJM2300NSA
N-Channel MOSFET
Typical Characteristics Curves
Output Characteristics
20
V
GS
=2.5V,3V,4.5V,6V
T
a
=25
℃
Pulsed
Transfer Characteristics
12
V
DS
=3V
Pulsed
10
16
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
8
12
V
GS
=1.8V
T
a
=25℃
6
8
4
4
2
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE V
DS
(V)
5
0
0.0
0.5
1.0
1.5
2.0
2.5
GATE TO SOURCE VOLTAGE V
GS
(V)
30
T
a
=25
℃
Pulsed
R
DS(ON)
I
D
100
R
DS(ON)
- V
GS
Pulsed
80
25
ON-RESISTANCE R
DS(ON)
(m
)
ON-RESISTANCE R
DS(ON)
(m
)
V
GS
=2.5V
I
D
=6A
60
V
GS
=4.5V
20
40
T
a
=125℃
20
T
a
=25℃
15
2
4
6
DRAIN CURRENT I
D
(A)
8
10
0
0
2
4
6
8
GATE TO SOURCE VOLTAGE V
GS
(V)
10
10
I
S
- V
SD
Threshold Voltage
1.2
1.0
1
THRESHOLD VOLTAGE V
TH
(V)
SOURCE CURRENT I
S
(A)
0.8
I
D
=250uA
0.6
T
a
=125℃
0.1
T
a
=25℃
0.4
0.2
0.01
0.0
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE V
SD
(V)
1.2
25
50
75
100
125
JUNCTION TEMPERATURE T
j
(
℃
)
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/6
PJM2300NSA
N-Channel MOSFET
Package Outline
0.8
1.0
Symbol
A
A1
b
c
D
E
HE
e
L1
L
θ
Dimensions in millimeter
Min.
0.900
0.000
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0o
Typ.
1.025
0.050
0.400
0.115
2.900
1.300
2.400
1.900
0.550REF
0.500
8o
Max.
1.150
0.100
0.500
0.150
3.000
1.400
2.550
2.000
0.8
1.0
1.9
SOT-23 (TO-236)
Recommended
soldering pad
Ordering Information
Device
PJM2300NSA
Package
SOT-23
Shipping
3,000/Tape & Reel (7 inches)
2.2
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Revision：1.0 Jan-2019
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PJM2300NSA
N-Channel MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245
O
C. If peak temperature is below 245
O
C, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370
O
C
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40
O
C
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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stm32/stm8
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