PJM2301PSA
P- Enhancement Mode Field Effect Transistor
Features
High power and current handing capability
Halogen free product is acquired
Surface mount package
SOT-23
1. Gate
2.Source
3.Drain
Applications
Battery protection
Load switch
Power management
Marking: M01
Schematic Diagram
Drain
3
1
Gate
2
Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Note1
Ratings at T
A
=25℃ unless otherwise specified.
Symbol
-V
DS
V
GS
-I
D
-I
DM
P
D
T
J
, T
STG
Value
20
±12
2.8
10
1.25
150, -55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Note2
Symbol
R
θJA
Typ.
100
Units
°C/W
www.pingjingsemi.com
Revision:2.2
Aug-2018
1/
8
PJM2301PSA
P- Enhancement Mode Field Effect Transistor
Electrical Characteristics
T
A
=25
℃
unless otherwise noted
Parameter
Static Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Note3
Drain-Source On-State Resistance
Note3
-V
(BR)DSS
I
GSS
-I
DSS
-V
GS(th)
R
DS(on)
g
FS
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= - 4.5 V, I
D
= - 2.8 A
V
GS
= - 2.5 V, I
D
= - 2 A
V
DS
= - 5 V, I
D
= - 2.8 A
20
±100
1
0.4
90
110
2
1
110
140
V
nA
µA
V
mΩ
S
Forward Transconductance
Note3
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
C
iss
C
oss
C
rss
V
DS
= - 10 V, V
GS
= 0 V,
f = 1 MHz
405
75
55
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode characteristics
Continuous Source-Drain Diode Current
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= -
10V
,
V
GS
= -
4.5V
,
I
D
= -
2.8A
5.5
3.3
10
6
nC
V
DS
= - 10 V, V
GS
= - 2.5 V,
I
D
= - 2.8 A
0.7
1.3
11
20
60
50
20
V
DD
= - 10 V, R
L
= 10 Ω
I
D
= - 1 A, V
GEN
= - 4.5 V,
R
G
= 1 Ω
35
30
10
ns
-I
S
-I
SM
-V
SD
I
S
= - 1 A
0.5
1.3
10
1.2
A
V
Pulse Diode Forward Current
Body Diode Voltage
Notes:
1.
2.
3.
Note1
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Revision:2.2
Aug-2018
www.pingjingsemi.com
2
/
8
PJM2301PSA
P- Enhancement Mode Field Effect Transistor
Typical Characteristics Curves
10
V
GS
= 5 thru 2.5 V
8
I
D
- Drain Current (A)
0.75
I
D
- Drain Current (A)
T
C
= - 55 °C
0.50
T
C
= 25 °C
0.25
2
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
0.00
0.0
0.3
0.6
0.9
1.2
1.5
T
C
= 125 °C
6
V
GS
= 1.5 V
4
V
GS
= 2 V
1.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
800
R
DS(on)
- On-Resistance (Ω)
0.15
V
GS
= 2.5 V
0.10
V
GS
= 4.5 V
0.05
C - Capacitance (pF)
600
C
iss
400
200
C
oss
C
rss
0.00
0
2
4
I
D
- Drain Current (A)
8
10
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 3 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance
(Normalized)
6
V
DS
= 5 V
V
DS
= 10 V
4
V
DS
= 15 V
2
1.3
1.5
I
D
= 2.8 A
Capacitance
1.1
V
GS
= 4.5 V
0.9
V
GS
= 1.8 V
0
0
2
4
Q
g
- Total Gate Charge (nC)
8
10
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.pingjingsemi.com
Revision:2.2
Aug-2018
3
/
8
PJM2301PSA
P- Enhancement Mode Field Effect Transistor
10
0.60
I
D
= 2.8 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.45
T
J
= 150 °C
1
T
J
= 25 °C
T
J
= - 50 °C
0.30
T
J
= 125 °C
0.15
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
10
0.3
I
D
= 250 µA
V
GS(th)
Variance (V)
0.2
Power (W)
8
6
0.1
I
D
= 1 mA
4
0.0
2
T
A
= 25 °C
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
10
Limited by R
DS(on)*
100 µs
1 ms
I
D
- Drain Current (A)
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
1s
10 s
100 s, DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
Revision:2.2
Aug-2018
www.pingjingsemi.com
4
/
8
PJM2301PSA
P- Enhancement Mode Field Effect Transistor
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
10
-4
Single Pulse
10
-3
10
-2
10
-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJF
= 50 °C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
www.pingjingsemi.com
Revision:2.2
Aug-2018
5
/
8
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
