P-Channel Power MOSFET
SOT-23
PJM2305PSA
Features
Fast switching
Low gate charge and R
DS(ON)
Low reverse transfer capacitances
1. Gate
2.Source
3.Drain
Marking:
S5
Application
Load switch and in PWM applicatopns
Power management
Schematic Diagram
Drain
3
1
Gate
2
Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Ratings at T
A
=25℃ unless otherwise specified.
Symbol
-V
DS
V
GS
-I
D
P
D
T
J
, T
STG
Value
12
±8
4.1
1.4
150, -55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Note1
Symbol
R
θJA
Typ.
89
Units
°C/W
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P-Channel Power MOSFET
Electrical Characteristics
(T
a
=25℃
unless otherwise specified
)
Parameter
Static Characteristics
Drain-source breakdown voltage
Drain to Source Leakage Current
Gate-body leakage current
Symbol
Test Condition
Min
Type
Max
Units
PJM2305PSA
-V
(BR)DSS
-I
DSS
I
GSS
V
GS
= 0V, I
D
=-250µA
12
1
±100
V
µA
nA
V
mΩ
mΩ
mΩ
S
V
DS
=-12V,V
GS
= 0V
V
GS
=
±8V, V
DS
=
0V
V
DS
=V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
=
-3.5A
0.5
45
55
75
6
Gate threshold voltage
Note1
-V
GS(th)
0.9
60
70
90
Drain-source on-resistance
Note1
R
DS(on)
V
GS
= -2.5V, I
D
=
-3A
V
GS
=-1.8V, I
D
=
-2.0A
Forward tranconductance
Note1
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
g
FS
V
DS
=-5V, I
D
=
-4.1A
C
iss
C
oss
C
rss
V
DS
=-4V,V
GS
=0V,f=1MHz
740
290
190
pF
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-Drain Diode characteristics
Diode Forward voltage
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=-4V,V
GS
=-4.5V,I
D
=-4.1A
V
DD
=-4V,V
GS
=-2.5V,I
D
=-4.1A
I
D
=-3.3A，
V
DD
=-4V,
V
GS
=-4.5V，R
GEN
=1Ω,
13
35
32
10
4.5
1.2
1.6
9
ns
nC
-V
DS
-I
S
V
GS
=0V, I
S
=-3.3A
1.2
V
A
Continuous source-drain diode
current
1.4
Note:
1. Pulse Test ; Pulse Width
≤300μs,
Duty Cycle
≤2%.
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P-Channel Power MOSFET
Typical Characteristic Curves
Output Characteristics
-16
-5
PJM2305PSA
Transfer Characteristics
V
DS
=-3V
-4
(A)
V
GS
= -4.5V、 -4V、 -3.5V、-3V、-2.5V
V
GS
=-2V
-8
I
D
DRAIN CURRENT
-3
-2
DRAIN CURRENT
I
D
(A)
-12
T
a
=100℃
Pulsed
T
a
=25℃
Pulsed
V
GS
=-1.5V
-4
-1
-0
-0
-1
-2
-3
-4
-0
-0.0
-0.5
-1.0
-1.5
-2.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
180
DS(ON)
—— I
D
200
R
DS(ON)
—— V
GS
T
a
=25℃
Pulsed
(m
Ω
)
(m
Ω
)
V
GS
=-1.8V
150
R
DS(ON)
R
DS(ON)
ON-RESISTANCE
100
120
ON-RESISTANCE
I
D
=-3.3A
60
V
GS
=-2.5V
50
T
a
=100℃
Pulsed
T
a
=25℃
Pulsed
-2
V
GS
=-4.5V
0
-0
-2
-4
-6
-8
DRAIN CURRENT
I
D
-10
-12
0
-0
-4
-6
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
-10
S
—— V
SD
-1.0
ThresholdVoltage
(V)
-0.8
I
S
(A)
V
TH
I
D
=-250uA
-0.6
-1
T
a
=100℃
Pulsed
T
a
=25℃
Pulsed
THRESHOLD VOLTAGE
SOURCE CURRENT
-0.4
-0.2
-0.1
-0.4
-0.8
-1.2
-1.6
-2.0
-0.0
25
50
75
100
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
AMBIENT TEMPERATURE T
a
(℃)
125
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P-Channel Power MOSFET
Package Outline
SOT-23
PJM2305PSA
0.8
Min.
0.900
0.000
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0o
Typ.
1.025
0.050
0.400
0.115
2.900
1.300
2.400
1.900
0.550REF
Max.
1.150
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8o
0.100
A
A1
b
c
D
E
HE
e
L1
L
θ
1.0
Symbol
Dimensions in millimeter
0.8
1.0
1.9
SOT-23 (TO-236)
Recommended soldering pad
Ordering
Information
Device
PJM2305PSA
Package
SOT-23
Shipping
3000PCS/Reel&Tape
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Revision：2.0
Oct-2018
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P-Channel Power MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
PJM2305PSA
Recommended peak temperature is over 245
℃.
If peak temperature is below 245
℃,
you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370
℃
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40
℃
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
Revision：2.0
Oct-2018
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