MMBTSC945
NPN Transistor
Features
⚫
⚫
Excellent hFE Linearity
Low noise
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking: CR
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
60
50
5
150
200
150
-55 to 150
V
V
V
mA
mW
℃
℃
Electrical Characteristics (T
A
=25℃)
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at V
CE
= 6 V, I
C
= 1 mA
Current Gain Group
L
H
H
FE
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
f
T
C
ob
130
200
-
-
60
50
5
-
-
150
-
200
400
100
100
-
-
-
0.3
1
-
3
-
-
nA
nA
V
V
V
V
V
MHz
pF
Collector Base Cutoff Current
at V
CB
= 60 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Base Breakdown Voltage
at I
C
= 100 μA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 100 μA
Collector Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 10 mA
Base Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 10 mA
Transition Frequency
at V
CE
= 6 V, I
C
= 10 mA, f = 30 MHz
Collector Output Capacitance
at V
CB
= 10 V, f = 1 MHz
www.pingjingsemi.com
Revision：1.0 Nov-2018
1/3
MMBTSC945
NPN Transistor
Electrical Characteristics Curves
12
Static Characteristic
30uA
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
——
I
C
T
a
=100
℃
(mA)
10
h
FE
27uA
24uA
300
COLLECTOR CURRENT
8
21uA
18uA
DC CURRENT GAIN
T
a
=25
℃
I
C
6
15uA
12uA
100
4
9uA
2
6uA
I
B
=3uA
0
2
6
8
10
12
30
V
CE
=6V
10
0.7
1
3
10
30
100
150
0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
300
I
C
1000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
100
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
30
600
T
a
=100
℃
400
10
1
3
10
30
β=10
100
150
200
0.1
β=10
0.3
1
3
10
30
100 150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
15
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 /I
C
=0
T
a
=25
℃
0.25
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
10
0.20
(pF)
C
10
C
ib
0.15
CAPACITANCE
0.10
5
C
ob
0.05
0
0.1
0.00
0.3
1
3
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
www.pingjingsemi.com
Revision：1.0 Nov-2018
2/3
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
