PJM138NSA
N- Enhancement Mode Field Effect Transistor
Features
Low gate charge and R
DS(ON)
Rugged and relaible
SOT-23
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers,
Display, memories, transistors, etc.
Battery operated systems
Solid-state relays
1. Gate
Marking:
S3
2.Source
3.Drain
Schematic diagram
3Drain
1
Gate
2
Source
Absolute Maximum Ratings
(T
A
=25
℃
unless otherwise specified
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
P
D
T
J
,T
STG
Limit
Unit
V
V
A
W
50
±20
0.22
0.35
-55 To 150
℃
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient
R
θJA
357
℃
/W
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PJM138NSA
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics
(T
A
=25℃
unless otherwise specified
)
Parameter
Static Characteristics
Drain-source breakdown voltage
Drain to Source Leakage Current
Gate-body leakage current
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Symbol
Test Condition
Min.
Typ.
Max.
Units
V
GS
= 0V, I
D
=250µA
V
DS
=50V, V
GS
= 0V
V
DS
=30V, V
GS
= 0V
V
GS
=±20V,V
DS
= 0V
50
0.5
100
V
µA
nA
nA
V
Ω
Ω
S
±
200
1
1.6
1
1.1
0.13
Gate threshold voltage
Note1
Drain-source on-resistance
Note1
Forward tranconductance
Note1
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=0.22A
V
GS
=4.5V, I
D
=0.22A
V
DS
=10V, I
D
=0.22A
2
3.5
6
g
FS
C
iss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,f=1MHz
26.5
12.9
5.9
pF
Switching Characteristics
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-Drain Diode characteristics
t
d(on)
t
r
t
d(off)
t
f
5
V
GS
=10V,V
DD
=30V,I
D
=0.29A
,R
GEN
=6Ω,
18
36
14
ns
Diode Forward voltage
Note1
V
SD
V
GS
=0V, I
S
=0.44A
1.4
V
Notes :
1.
Pulse test : pulse width≤300μs, duty cycle≤2%.
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PJM138NSA
N- Enhancement Mode Field Effect Transistor
Typical Characteristic Curves
Output Characteristics
500
Transfer Characteristics
400
V =3V
DS
400
V =10V
GS
V =4V
GS
V
GS
=3V
V =2V
GS
Plused
320
Drain Current I
D
(mA)
300
Drain Current(mA)
240
200
160
T =125℃
a
100
T =25℃
a
Pl sed
80
T
a
=25℃
0
0
1
2
3
4
0
0.8
1.2
1.6
2.0
2.4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
R
DS(ON)
——V
GS
ID =500mA
Plused
1.5
R
DS(ON)
——I
D
T a =25℃
Plused
5
4
On-Resistancer R
DS(ON)
(Ω)
1.2
V
GS
=4.5V
On-Resistancer R
DS(ON)
(Ω)
3
V
GS
=10V
0.9
T
a
=125℃
2
1
T
a
=25
℃
0.6
0.2
0.4
0.6
0.8
0
1
2
3
4
5
Drain Current I
D
(A)
I
S
——V
SD
Plused
Gate to Source Voltage V
GS
(V)
Threshold Voltage
1
1.2
Source Current I (A)
0.1
S
T
a
=125℃
T
a
=25℃
Threshold Voltage V
TH
(V)
1.0
I
D
=250uA
0.01
0.8
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
25
50
75
100
125
Source to Drain Voltage V
SD
(V)
Juction Temperature T
J
(℃)
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PJM138NSA
N- Enhancement Mode Field Effect Transistor
Package Outline
SOT-23
0.8
Min.
0.900
0.000
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0
o
Typ.
1.025
0.050
0.400
0.115
2.900
1.300
2.400
1.900
0.550REF
Max.
1.150
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8
o
0.100
A
A1
b
c
D
E
HE
e
L1
L
θ
1.0
Symbol
Dimensions in millimeter
0.8
1.0
1.9
SOT-23 (TO-236)
Recommended
soldering pad
Ordering
Information
Device
Package
SOT-23
Shipping
3000PCS/Reel&Tape
PJM138NSA
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PJM138NSA
N- Enhancement Mode Field Effect Transistor
Conditions
of
Soldering
and
Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245
O
C. If peak temperature is below 245
O
C, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370
O
C
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40
O
C
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Jan-2019
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