MMBT8050-1.5A
NPN Transistor
Features
For Switching and Amplifier Applications.
Especially Suitable for AF-Driver Stages and Low
Power Output Stages.
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking: -C:
X1
Absolute Maximum Ratings
Parameter
-D: Y1
Symbol
Value
Unit
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
40
25
6
1.5
350
150
-55 to 150
V
V
V
A
mW
℃
℃
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA Current Gain Group
at V
CE
= 1 V, I
C
= 800 mA
Collector Base Cutoff Current
at V
CB
= 35 V
Emitter Base Cutoff Current
at V
CB
= 6 V
Collector Base Breakdown Voltage
at I
C
= 100 μA
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Emitter Base Breakdown Voltage
at I
E
= 100 μA
Collector Emitter Saturation Voltage
at I
C
= 800 mA, I
B
= 80 mA
Base Emitter Saturation Voltage
at I
C
= 800 mA, I
C
= 80 mA
Base Emitter Voltage
at V
CE
= 1 V, I
B
= 10 mA
Transition Frequency
at V
CE
= 10 V, I
C
= 50 mA
Revision：1.1 Oct-2017
C
D
H
FE
100
160
40
-
-
250
400
-
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
F
T
-
-
40
25
6
-
-
-
120
-
-
-
-
-
-
-
-
-
100
100
-
-
-
0.5
1.2
1
-
nA
nA
V
V
V
V
V
V
MHz
1/3
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