PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Features
⚫
⚫
⚫
⚫
⚫
V
DS
= -20V I
D
= -2A
R
DS(ON)
=120mΩ (typ) @ V
GS
=-2.5V
R
DS(ON)
=88mΩ (typ) @ V
GS
=-4.5V
High power and current handing capability
Halogen and Antimony Free
Surface mount package
1. Gate 2.Source
Marking : S01
3.Drain
SOT-23
Applications
⚫
⚫
⚫
Battery protection
Load switch
Power management
1
Gate
Drain
3
2
Source
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Note1
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Value
- 20
± 12
-2
- 10
0.7
- 55 to 150
A
W
°
C
V
Unit
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance,Junction-to-Ambient
Note2
R
θJA
178
℃/W
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PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Electrical Characteristics
T
C
=25
℃
unless otherwise noted
Parameter
Static Parameters
Drain-Source Breakdown Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Note3
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= - 4.5 V, I
D
= - 2 A
Drain-Source On-State Resistance
Note3
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 1 A
120
180
- 0.4
88
- 20
± 100
-1
-1
120
mΩ
V
nA
µA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic Parameters
Forward Transconductance
Note3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
C
iss
C
oss
C
rss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 5 V, I
D
= - 2 A
4
405
75
55
pF
S
Switching Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 10
Ω
I
D
= - 1 A,
V
GEN
= - 4.5 V, R
G
= 1
Ω
V
DS
= - 10 V, V
GS
= -
4.5
V, I
D
= - 2A
2.9
0.45
0.75
11
35
30
10
20
60
ns
50
20
nC
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Note2
I
S
V
SD
I
S
= - 2 A
-2
- 1.2
A
V
Body Diode Voltage
Note3
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤
10 sec.
3. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
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PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Typical Characteristics Curves
10
V
GS
= 5 thru 2.5 V
8
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
V
GS
= 2 V
12
V
DS
=5V
10
8
6
V
GS
= 1.5 V
4
6
4
125℃
25℃
2
2
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0
0.5
1
1.5
2
2.5
-V
GS
- Gate-to-Source Voltage (V)
-V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
175
Transfer Characteristics
800
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
150
600
C
iss
400
125
V
GS
=
-
2.5 V
100
V
GS
=
-
4.5 V
75
200
C
oss
C
rss
0
0
2
4
-I
D
- Drain Current (A)
8
10
0
5
10
15
20
-V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
4
I
D
=
-2
A
-V
GS
- Gate-to-Source Voltage (V
)
R
DS(on)
- On-Resistance
(Normalized)
3
1.3
1.5
I
D
=
-2
A
Capacitance
2
V
DS
=
-10
V
1.1
V
GS
=
-4.5
V
0.9
V
GS
=
-2.5
V
1
0
0
1
2
3
4
5
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°
C)
Gate Charge
On-Resistance vs. Junction Temperature
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PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
10
340
300
R
DS(on)
- On-Resistance ()
I
D
=-2V
1
-I
S
-
Source
Current (A )
260
220
180
140
100
0.1
125℃
0.01
125℃
25℃
0.001
25℃
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
- Source-to-Drain Voltage (V)
1.2
60
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward
Voltage
0.4
10
On-Resistance vs. Gate-to-Source Voltage
100 µs
Limited by R
DS(on)*
0.3
I
D
= 250 µA
I
D
- Drain Current (A)
V
GS(th)
Variance (V)
0.2
I
D
= 1 mA
1
10 ms
1 ms
0.1
100 ms
0.1
T
A
= 25 °
C
Single Pulse
BVDSS Limited
1s
10 s
100 s, DC
0.0
- 0.1
0.01
0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
1
10
100
T
J
- Temperature (°
C)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Threshold Voltage
Safe Operating Area
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
10
-4
Single Pulse
10
-3
10
-2
10
-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Revision:1.0 Oct-2018
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PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Package Outline
SOT-23（TO-236)
0.8
Dimensions in millimeter
Min.
0.900
0.000
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0o
Typ.
1.025
0.050
0.400
0.115
2.900
1.300
2.400
1.900
0.550REF
0.500
8o
Max.
1.150
0.8
0.500
0.150
3.000
1.400
2.550
2.000
1.9
2.2
0.100
A
A1
b
c
D
E
HE
e
L1
L
θ
1.0
1.0
Symbol
SOT-23 (TO-236)
Recommended soldering pad
Ordering Information
Device
PJM2301PSA-S
Package
SOT-23
Shipping
3000/Reel&Tape(7inch)
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