MXD8011HF
LNA with Bypass Mode for LTE Mid-High Band
Description
MXD8011HF high gain, low noise amplifier (LNA) is dedicated
to LTE middle band and high band receive using advanced
RFCMOS process. This product has two operation modes, low
noise mode and bypass mode.
MXD8011HF works under a 1.6V to 3.0V single power supply
while consumes 7.5 mA current in low noise mode, in bypass
mode, the power consumption will be reduced to less than 1uA.
MXD8011HF uses a small 1.1mm×0.7mm×0.45mm LGA 6-pin
package.
Features
Broadband frequency range: 1.8 to 2.7 GHz
High Gain
14.0 dB gain at 1.8GHz to 2.2GHz
13.0 dB gain at 2.3GHz to 2.7GHz
Low noise figure
0.8 dB noise figure at 1.8GHz to 2.2GHz
0.9 dB noise figure at 2.3GHz to 2.7GHz
Operation current 7.5 mA
Small, LGA (6-pin, 1.1mm x 0.7mm x 0.45mm) package
，
MSL1
No DC blocking capacitors required.
Applications
LTE high-mid band receiving
Page 1 / 7
MXD8011HF Rev1.8
This document contains information that is confidential and proprietary to Maxscend Microelectronics Company, Ltd.
(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or
licensing of technology is implied by this document.
Pin Description
LNA with Bypass Mode for LTE Mid-High Band
Pin Configuration/Application Diagram
RFIN
GND
RFOUT
4
3
MXD8011HF
RFIN
L1
VDD
5
2
1nF
GND
EN
VDD
EN
6
1
RFOUT
Figure 1 Pin Configuration/Application Diagram (Top View)
Table 1 Pin Descriptions
Pin No.
1
2
3
4
5
6
Name
GND
VDD
RFOUT
GND
RFIN
EN
I/O
AG
AP
AO
AG
AI
DI
Pin Description
Analog VSS
Power supply
LNA output
Analog VSS
LNA input from antenna
Pull high into low noise mode, pull low into bypass mode
Note:
DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional),
AP (analog power), AG (analog ground),
Table 2 Input matching inductance
Component
Matching Band
1800MHz – 2200MHz
Vendor
Murata
various
Type
Wired inductor, high Q
Ceramic inductor, low Q
Wired inductor, high Q
Ceramic inductor, low Q
Part Number & value
LQW15AN4N7, 4.7nH
4.3nH
LQW15AN3N9, 3.9nH
3.6nH
L1
2300MHz – 2700MHz
Murata
various
Page 2 / 7
MXD8011HF: Rev1.8
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Electrical Characteristics
LNA with Bypass Mode for LTE Mid-High Band
Absolute Maximum Ratings
Table 3 Absolute Maximum Ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Human Body Mode ESD
Charge Device Mode ESD
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
ESD_
HBM
ESD_
CDM
Ranges
-0.3½+3.3
-0.3½VDD+0.3, Max:3.3
+22
-40½+90
-65½+150
1500
1000
Units
V
V
dBm
℃
℃
V
V
Note1:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device
with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits
listed here may result in permanent damage to the device.
Note2:
According to ESDA/JEDECJS-001-2014
Note3:
According to ESDA/JEDECJS-002-2014
DC Characteristics
Table 4 DC Electrical Specifications
Parameter
Power supply
Supply current
Symbol
V
DD
I
DD_HG
Specification
Min.
1.6
5.5
Typ.
2.8
7.5
Max.
3.0
11.0
Units
V
Test Condition
mA
High Gain Mode
VDD = 2.8V, VEN=high
Bypass Mode
VDD = 2.8 V, VEN=low
Supply current
Control Voltage High
Control Voltage Low
I
DD_BY
V
CTL_H
V
CTL_L
-
1.0
0.0
0.05
1.8
0.0
1.0
VDD
0.3
uA
V
V
Page 3 / 7
MXD8011HF: Rev1.8
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Electrical Characteristics
LNA with Bypass Mode for LTE Mid-High Band
AC Characteristics
Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted
Table 5 High Gain mode Electrical Specifications
Parameter
DC Specifications
Power gain
Symbol
Specification
Min.
1800
12.5
Typ.
-
14.0
13.0
0.8
Max.
2700
15.5
14.5
1.4
1.5
-5
-6
-
Units
MHz
dB
dB
dB
dB
dB
dB
Test Condition
1800-2200MHz
2300-2700MHz
1800-2200MHz
2300-2700MHz
1800 to 2700MHz
1800 to 2700MHz
G
11.5
Noise figure
Input Return loss
Output Return loss
Stability factor
Input 1 dB compression
NF
|S11|
|S22|
Kf
P1dB
-
0.9
-
-
1.2
-8
-4
-2
-10
-10
-
-3
-
0
3
2
2
-68
-67
-37
-38
-
1
-
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
μs
2300 to 2700MHz
Note1
Note2
Note3
Note4
Note5
Note6
Note7
Shutdown state to
power on state
dBm
1800 to 2200MHz
point
Input IP3
IIP3
-3
-3
Out-of band Input 3rd
order intermodulation
Input 2nd order intercept
intermodulation
Startup time
-62
-61
-32
-33
-
Note1:
Pin=Pin2=-25dBm, F1=1960MHz, F2=1961MHz
Note2:
Pin=Pin2=-25dBm, F1=2100MHz, F2=2101MHz
Note3:
Pin=Pin2=-25dBm, F1=2600MHz, F2=2601MHz
Note4:
F1=2700MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2100MHz
Note5:
F1=2100MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2700MHz
Note6:
F1=2650MHz, F2=950MHz, two tone input power -25dBm, measure 2nd order intermodulation at 1700MHz
Note7:
F1=950MHz, F2=1700MHz, two tone input power -25dBm, measure 2nd order intermodulation at 2650MHz
Table 6 Bypass Mode Electrical Specifications
Parameter
Insertion loss
Input Return loss
Output Return loss
Input 1 dB
Symbol
IL
|S11|
|S22|
P1dB
Specification
Min.
-5
-
-
10
Typ.
-2
-10
-10
15
Max.
-
-6
-6
-
Units
dB
dB
dB
dBm
Test Condition
1800 to 2700MHz
1800 to 2700MHz
1800 to 2700MHz
1800 to 2700MHz
compression point
Page 4 / 7
MXD8011HF: Rev1.8
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Package Information
LNA with Bypass Mode for LTE Mid-High Band
Package Outline Dimensions
Figure 2 Package outline dimension
Page 5 / 7
MXD8011HF: Rev1.8
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
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