MXD8113H9
SP3T LNA for LTE mid
-
high band RX
ED
PPROV
A
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Maxscend Microelectronics Company Limited. All rights reserved.
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MXD8113H9 – SP3T LNA for LTE RX
General Description
The MXD8113H9 is an FEM integrated with SP3T,
LNA. The high linearity performance and low noise
figure makes the device an ideal choice for LTE
receiving applications.
The MXD8113H9 FEM is provided in a compact
Quad Flat No-Lead (QFN) 1.15mm x 1.15mm x
0.45mm package. A functional block diagram is
shown in Figure 1. The pin configuration and
package are shown in Figure 2. Signal pin
assignments and functional pin descriptions are
provided in Table 1.
Applications
LTE high-mid band receiving
Features
Broadband frequency range: 1.7 to 2.7 GHz
High Gain
-
-
13dB gain at 1.7GHz to 2.3GHz
12dB gain at 2.3GHz to 2.7GHz
Low noise figure
-
-
0.9dB noise figure at 1.7GHz to 2.3GHz
1.1dB noise figure at 2.3GHz to 2.7GHz
Input 1dB compression point -4dBm
Operation current 6.5mA
Small, LGA (9-pin, 1.15mm x 1.15mm x
0.45mm) package
，MSL1
Functional Block Diagram and Pin Function
L1
L2
L3
RF1
RF2
RF3
1
V1
V1
1nF
8
V2
7
VDD
V2
1nF
2
RF2
9
GND
6
GND
VDD
1nF
MXD8113H9
3
RF1
4
RF3
5
OUT
RFOUT
Figure 1.Functional Block Diagram
Figure 2.Pin-out (Top View)
Page 2 of 7
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MXD8113H9 – SP3T LNA for LTE RX
Table 1. Pin Description
Pin No.
Name
Description
Pin No.
Name
Description
1
2
3
4
5
V1
RF2
RF1
RF3
OUT
Digital control 1#
RF-Port 2
RF-Port 1
RF-Port 3
RF output
6
7
8
9
GND
VDD
V2
GND
Ground
Power Supply
Digital control 2#
Ground
Table 2 Input matching inductance
Component
Matching Band
1700MHz – 2300MHz
L1/L2/L3
2300MHz – 2700MHz
Vendor
Murata
various
Murata
various
Type
Wired inductor, high Q
Ceramic inductor, low Q
Wired inductor, high Q
Ceramic inductor, low Q
Part Number & value
LQW15AN6N2, 6.2nH
5.6nH
LQW15AN5N1, 5.1nH
4.9nH
Truth Table
Table 3.
V1
V2
Active Path
1
0
1
0
Note:
“1” = 1.0 V to 3.00 V. “0” = –0 V to +0.3 V.
0
1
1
0
RF1 active
RF2 active
RF3 active
Power down
Recommended Operation Range
Table 4.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
f1
V
DD
V
CTL_H
V
CTL_L
Min
1700
2.5
1.6
0
Typ
-
2.8
1.8
0
Max
2700
3.0
3.0
0.3
Units
MHz
V
V
V
Page 3 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
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MXD8113H9 – SP3T LNA for LTE RX
Specifications
Table 5.Electrical Specifications
Parameter
DC Specifications
Control voltage:
Low
High
Supply voltage
Supply current
Power down current
RF Specifications
Power gain
Noise figure
Input Return loss
Output Return loss
Isolation(active gain
- inactive gain)
Input 1 dB
compression point
Switching on time
Switching off time
Startup time
G
nf
|S11|
|S22|
ISO
P1dB
11
10
-
-
-
-
25
-7
-4
-
-
-
13
12
0.9
1.1
-10
-10
30
-4
-1
2
2
3
14.5
13.5
1.4
1.6
-6
-6
-
-
-
3
3
4
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
us
us
us
1700 to 2300MHz
2300 to 2700MHz
1700 to 2300MHz
2300 to 2700MHz
1700 to 2700MHz
1700 to 2700MHz
1700 to 2700MHz
1700 to 2300MHz
2300 to 2700MHz
50% VCTL to 10/90% RF
50% VCTL to 90/10% RF
Shutdown state to any RF
switch state
Symbol
Specification
Min.
Typical
Max.
Units
Test Condition
V
CTL_L
V
CTL_H
V
DD
I
DD
I
PD
0
1.60
2.5
0
+1.8
2.8
6.5
1
0.3
3.00
3.0
V
V
V
mA
uA
VDD = 2.8 V
Absolute Maximum Ratings
Table 6. Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic
discharge:
Human Body Model
(HBM), Class 1C
Charged device
model (CDM), Class III
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
Minimum
+2.5
0
-
–35
–55
Maximum
+3.3
+3.0
+10
+90
+150
Units
V
V
dBm
℃
℃
ESD
-
1500
1000
V
V
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Page 4 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
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MXD8113H9 – SP3T LNA for LTE RX
Package Outline Dimension
Figure 4. Package outline dimension
Page 5 of 7
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