MXD8544B
0.1-3.0GHz SP4T Antenna Tuning Switch
VED
APPRO
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MXD8544B – 0.1-3.0GHz SP4T Antenna Tuning Switch
General Description
The MXD8544B is a CMOS silicon-on-insulator
(SOI), single-pole, four-throw (SP4T) switch. The
high linearity and ruggedness performance and
extremely low insertion loss makes the device an
ideal
choice
for
GSM/WCDMA/LTE
handset
Applications
GSM/WCDMA/LTE band and mode switching
Antenna tuning switch
Features
Broadband frequency range: 0.1 to 3.0 GHz
Low insertion 0.50dB @ 2.7 GHz
High P0.1dB of 45dBm
Positive low voltage control: VC = 1.0 to 3.0 V,
VDD = 2.5 to 3.0 V, Small QFN (10-pin,
1.1mm x 1.5mm x 0.38mm) package
antenna tuning application.
The MXD8544B SP4T switch is provided in a
compact QFN 1.1mm x 1.5mm x 0.38mm package.
A functional block diagram is shown in Figure 1.
The pin configuration and package are shown in
Figure 2. Signal pin assignments and functional
pin descriptions are provided in Table 1.
Functional Block Diagram and Pin Function
ANT
RF1
RF2
Decoder
RF3
RF4
RF1
1
ANT
10
9
RF3
RF2
2
8
RF4
V3
3
7
GND
VDD
4
5
6
V2
V1
V2 V3 VDD
Figure 1.Functional Block Diagram
V1
Figure 2.Pin-out (Top View)
Page 2 of 7
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MXD8544B – 0.1-3.0GHz SP4T Antenna Tuning Switch
Application Circuit
Antenna Port
RF Port1
RF1
1
10
9
RF3
RF Port3
RF Port2
V3
100pF
RF2
2
8
RF4
GND
RF Port4
3
7
VDD
100pF
4
5
6
100pF
V2
V1
100pF
Figure 3. MXD8544B Application Circuit
Table 1. Pin Description
Pin No.
1
2
3
4
5
Name
RF1
RF2
V3
VDD
V1
Description
RF port 1
RF port 2
Control Logic #3
DC power supply
Control Logic #1
Pin No.
6
7
8
9
10
Name
V2
GND
RF4
RF3
ANT
Description
Control Logic #2
Ground
RF port 4
RF port 3
Antenna port
Truth Table
Table 2.
State
1
2
3
4
5
6
7
8
V1
0
0
1
0
0
1
1
1
V2
0
1
0
0
1
0
1
1
V3
1
1
1
0
0
0
0
1
RF Path
All Ron
ANT to RF1 and RF2
ANT to RF3 and RF4
ANT to RF1
ANT to RF2
ANT to RF3
ANT to RF4
All isolation
Note:
“1” = 1.0 V to 3.00 V. “0” = 0 V to +0.3 V.
Recommended Operation Range
Table 3.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
f1
V
DD
V
CTL_H
V
CTL_L
Min
0.1
2.5
1.0
0
Typ
-
2.8
1.8
0
Max
3.0
3.0
3.0
0.3
Units
GHz
V
V
V
Page 3 of 7
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MXD8544B – 0.1-3.0GHz SP4T Antenna Tuning Switch
Specifications
Table 4.Electrical Specifications
Parameter
DC Specifications
Control voltage:
Low
High
Supply voltage
Supply current
Control current
RF Specifications
Insertion loss
IL
27
25
20
0.35
0.45
0.50
30
27
22
20
1.20
1.45
110
+45
60
-85
-85
-65
-65
-65
-65
-115
-115
3.0
3.0
10
5.0
5.0
1.55
Ω
fF
dBm
V
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
μs
μs
μs
dB
dB
dB
dB
dB
dB
dB
0.8 to 1.0 GHz
1.0 to 2.2 GHz
2.2 to 3.0 GHz
0.8 to 1.0 GHz
1.0 to 2.2 GHz
2.2 to 3.0 GHz
0.8 to 3.0 GHz
0.8 to 3.0 GHz
Switch on Path
Switch off Path
0.8 to 3.0 GHz,
ANT to RF1/2/3/4
f0 = 700 to 2700 MHz,
25% duty cycle
f0 = 700 to 2700 MHz, PIN = +26
dBm
f0 = 824 to 915 MHz, PIN = +35
dBm
f0 = 1710 to 2690 MHz, PIN = +33
dBm
CW Carrier on RF Port, +20 dBm
CW Interferer on ANT port, -15 dBm
CW Carrier on RF Port, +20 dBm
CW Interferer on ANT port, -15 dBm
50% VCTL to 90% RF
50% VCTL to 10% RF
Power off state to any RF
switch state
Symbol
Specification
Min.
Typical
Max.
Units
Test Condition
V
CTL_L
V
CTL_H
V
DD
I
DD
I
CTL
0
1.0
2.5
0
1.8
2.8
90
1
0.3
3.0
3.0
120
5
V
V
V
uA
uA
V
DD
= 2.8 V
V
CTL
= 1.8 V
Isolation
Return loss
Voltage Standing
Wave Ratio
On Resistance
(RF1/2/3/4 to ANT)
OFF Capacitance
(RF1/2/3/4 to ANT)
Input 0.1 dB
compression point
Peak RF operating
voltage
LTE TX harmonic
(RF1/2/3/4 to ANT)
GSM LB harmonic
(RF1/2/3/4 to ANT)
GSM HB harmonic
(RF1/2/3/4 to ANT)
Second order
intermodulation
Third order
intermodulation
Switching on time
Switching off time
Startup time
ISO
|S
11
|
VSWR
Ron
Coff
P
0.1dB
V
peak
2f0
3f0
2f0
3f0
2f0
3f0
IMD2
IMD3
Page 4 of 7
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MXD8544B – 0.1-3.0GHz SP4T Antenna Tuning Switch
Table 5. IMD2 Test Conditions
Band
1 Low
1 High
5 Low
5 High
In-band freq
MHz
2140
2140
881.5
881.5
CW Carrier
MHz
dBm
1950
1950
836.5
836.5
+20
+20
+20
+20
CW Interferer
MHz
dBm
190
4090
45
1718
-15
-15
-15
-15
Table 6. IMD3 Test Conditions
Band
1
5
In-band freq
MHz
2140
881.5
CW Carrier
MHz
dBm
1950
836.5
+20
+20
CW Interferer
MHz
dBm
1760
791.5
-15
-15
Absolute Maximum Ratings
Table 7. Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model
(HBM), Class 2
Machine Model (MM),
Class B
Charged device model
(CDM), Class III
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
ESD_HBM
ESD_MM
ESD_CDM
Minimum
+2.5
0
–30
–55
Maximum
+3.6
+3.6
+45.5
+85
+150
2000
200
500
Units
V
V
dBm
℃
℃
V
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Page 5 of 7
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