MXD8626
SPDT Switch for 3G/4G Application
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MXD8626 – SPDT Switch for 3G/4G Application
General Description
The MXD8626 is a Single-Pole, Double-Throw
(SPDT) LTE/WCDMA/GSM switch. Switching is
controlled by an integrated GPIO interface with a
single control pin.
No external DC blocking capacitors are required
as long as no DC voltage is applied on any RF
path.
The MXD8626 is provided in a compact 1.1mm x
0.7mm x 0.45mm 6-lead LGA package that meets
requirements for board-level assembly.
A
functional
block
diagram
and
the
pin
Applications
GSM/WCDMA/LTE
Features
Broadband frequency range: 0.7 to 2.7 GHz
Low insertion loss: 0.35 dB @ 2.7 GHz
High isolation: 25 dB up to 2.7 GHz
P0.1dB >35dBm
No external DC blocking capacitors required
Single GPIO control line with VDD voltage
regulator:
V
CTL
= 1.6 to 3.00 V
V
DD
= 2.5 to 3.00 V
Small, 6-Lead LGA, 400 um pitch (1.1mm x
0.7mmx 0.45 mm) package
configuration are shown in Figure 1.
Functional Block Diagram and Pin Function
1
V1
6
RF1
RF1
RF2
ANT
2
GND
5
ANT
Logic and Supply
3
VDD
4
RF2
VDD
V1
Page 2 of 6
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MXD8626 -- SPDT Switch for 3G/4G Application
Application Circuit
VCTL1
1
V1
6
RF1
2
GND
VDD
5
ANT
3
VDD
C1
100pF
4
RF2
Figure 2. MXD8626 Application Circuit
Note: C1 = 100pF
Table 1. Pin Description
Pin No.
1
2
3
Name
V1
GND
VDD
Description
Digital control input
Ground
Power supply
Pin No.
4
5
6
Name
RF2
ANT
RF1
Description
RF I/O. Throw 2 of the switch.
Antenna
RF I/O. Throw 1 of the switch.
Truth Table
Table 2.
State
0
1
Note:
“1” = 1.6 V to 3.00 V. “0” = 0 V to +0.3 V.
Active Path
ANT to RF1
ANT to RF2
V1 (Bump B1)
0
1
Recommended Operation Range
Table 3.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
f1
V
DD
V
CTL_H
V
CTL_L
Min
0.1
2.5
1.6
0
Typ
-
2.8
1.8
0
Max
3.0
3.0
3.0
0.3
Units
GHz
V
V
V
Page 3 of 6
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MXD8626 -- SPDT Switch for 3G/4G Application
Specifications
Table 4.Electrical Specifications
Parameter
DC Specifications
Supply voltage
Control voltage:
Low
High
Current on V1
pin
Supply current
DC supply turn-
on/turn-off time
RF path
switching time
Supply ripple
RF Specifications
Insertion loss
(RF1 or RF2 to
ANT pin)
Isolation (ANT to
RF1 or RF2)
Voltage Standing
Wave Ratio, all
ports
0.1dB
compression
point
（from
antenna to RF1
and RF2）
V
DD
V
CTL_L
V
CTL_H
I
CTL
I
DD
t
on
83
2.5
0
+1.6
2.8
0
+1.8
3.0
+0.3
+3.0
5
90
10
V
V
V
μA
μA
μs
V
DD
= 2.8 V, V1 = V
CTL_H
Measured from 50% of final V
DD
supply voltage to 90% of final RF
power
From one active state to another
active state transition, measured
from 50% of final control voltage to
90% of final RF power
Symbol
Specification
Min.
Typical
Max.
Units
Test Condition
t
sw
V
PP
1
2
20
μs
mV
pp
dB
dB
dB
dB
dB
dB
IL
ISO
VSWR
35
28
23
0.31
0.34
0.35
40
30
25
1.25:1
1.5:1
700 to 960 MHz
1710 to 2170 MHz
2170 to 2690 MHz
700 to 960 MHz
1710 to 2170 MHz
2170 to 2690 MHz
Referenced to 50
Ω,
700 to 2690 MHz
-
35
dBm
700 to 2690 MHz
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic
discharge:
Human Body Model
(HBM), Class 1C
Machine Model (MM),
Class A
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
Minimum
+2.5
0
–30
–55
Maximum
+3.0
+3.0
+35
+85
+150
1000
100
Units
V
V
dBm
℃
℃
ESD
V
V
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Page 4 of 6
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MXD8626 -- SPDT Switch for 3G/4G Application
Package Outline Dimension
A
aaa
C
D
//
ccc
C
PIN 1 ID.
A
SIDE VIEW
aaa
C
E
A3
A2
TOP VIEW
e
0.200
0.050
ALL DIMENSIONS ARE IN MILLIMETERS.
SYMBOL
A
A2
A3
e
D
E
aaa
ccc
MIN.
0.40
0.09
0.31
0.35
0.65
1.05
MILLIMETER
NOR.
0.45
0.12
0.33
0.40
0.70
1.10
0.10
0.05
MAX.
0.50
0.15
0.35
0.45
0.80
1.15
Φ0.200
0.050
BOTTOM VIEW
Figure 3. Package outline dimension
Page 5 of 6
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