MXD8015H
Low Noise Amplifier for LTE Mid-High Band
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Page 1 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8015H
LNA for LTE mid-high band
General Description
MXD8015H high gain, low noise amplifier (LNA) is
dedicated to LTE middle band and high band
receive using advanced RFCMOS process. The
high linearity performance and low noise figure
makes the device an ideal choice for LTE
receiving Applications.
MXD8015H works under a 1.6V to 3.3V single
power supply while consumes 6 mA current in low
noise mode, in power down mode, the power
consumption will be reduced to less than 1uA.
MXD8015H uses a small 1.1mm
×
0.7mm
×
0.45mm LGA 6-pin package.
Features
Broadband frequency range: 1.8 to 2.7 GHz
High Gain
-
-
15.5dB gain at 1.8GHz to 2.2GHz
14.5dB gain at 2.3GHz to 2.7GHz
Low noise figure
-
-
0.65dB noise figure at 1.8GHz to 2.2GHz
0.70dB noise figure at 2.3GHz to 2.7GHz
Operation current 6mA
Small, LGA (6-pin, 1.1mm x 0.7mm x 0.45mm)
package
，MSL1
No DC blocking capacitors required.
Applications
LTE high-mid band receiving
Pin Configuration/Application Diagram (Top view)
RFin
GND
4
3
RFOUT
RF output
L1
RF inp ut
RFI N
5
V DD
MXD8015H
2
EN
V DD
0.1uF
VDD
E nabl e
EN
6
1
GND
RFOUT
Figure 1 MXD8015H application circuit
Page 2 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
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MXD8015H
LNA for LTE mid-high band
Pin Descriptions & Input matching inductance
Table 1
Pin Name
I/O
Pin Description
GND
AG
Analog VSS
VDD
AP
Power supply
RFOUT
AO
LNA output
GND
AG
Analog VSS
RFIN
AI
LNA input from antenna
EN
DI
Pull high into low noise mode, pull low into power down mode
Note:
DI
(digital input),
DO
(digital output),
DIO
(digital bidirectional),
AI
(analog input),
AO
(analog output),
AIO
(analog bidirectional),
AP
(analog power),
AG
(analog ground),
Pin
1
2
3
4
5
6
Table 2 Input matching inductance
Component
Matching Band
1800MHz – 2200MHz
L1
2300MHz – 2700MHz
Vendor
Murata
various
Murata
various
Type
Wired inductor, high Q
Ceramic inductor, low Q
Wired inductor, high Q
Ceramic inductor, low Q
Part Number & value
LQW15AN6N8, 6.8nH
6.2nH
LQW15AN4N3, 4.3nH
3.9nH
Recommended Operation Range
Table 3
Parameters
Operation Frequency
Power supply
Control Voltage High
Control Voltage Low
Symbol
f1
V
DD
V
CTL_H
V
CTL_L
Min
1800
1.6
1.0
0
Typ
-
2.8
1.8
0
Max
2700
3.3
VDD
0.3
Units
MHz
V
V
V
Absolute Maximum Ratings
Table 4 Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model
Note1
(HBM), Class 1C
Machine Model (MM),
Note2
Class A
Charged device model
Note3
(CDM), Class III
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
ESD_HBM
ESD_MM
ESD_CDM
Minimum
-0.3
-0.3
-
–40
–65
Maximum
+3.6
VDD+0.3
+20
+90
+160
1500
Units
V
V
dBm
℃
℃
-
125
500
V
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Note1:
According to ESDA/JEDECJS-001-2014
Note2:
According to JESD22-A115C
Note3:
According to ESDA/JEDECJS-002-2014
Page 3 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
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MXD8015H
LNA for LTE mid-high band
Specifications
Typically T
A
=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted
Table 5 High Gain mode Electrical Specifications
Parameter
DC Specifications
Supply voltage
Supply current
V
DD
I
DD
1.6
4
0
2.8
6
0.05
3.3
9
1
V
mA
uA
V
DD
= 2.8V, V
EN
=high
V
DD
= 2.8 V, V
EN
=low
Symbol
Specification
Min.
Typical
Max.
Units
Test Condition
RF Specifications
Power gain
Noise figure
Input Return loss
Output Return loss
Stability factor
Input 1 dB compression
point
Input IP3
Startup time
G
NF
|S11|
|S22|
Kf
P1dB
IIP3
14
12.5
-
-
-
1.2
-10
-5
-4
-1
-
15.5
14.5
0.65
0.70
-10
-10
-
-7
-2
0
3
-
17
16.5
1.1
1.3
-5
-6
-
-
-
1
dBm
dBm
dBm
dBm
us
1800 to 2200MHz
2300 to 2700MHz
Note1
Note2
Shutdown state to power on state
dB
dB
dB
dB
dB
dB
1800-2200MHz
2300-2700MHz
1800-2200MHz
2300-2700MHz
1800 to 2700MHz
1800 to 2700MHz
Note1: Pin=Pin2=-25dBm, F1=2100MHz, F2=2101MHz
Note2: Pin=Pin2=-25dBm, F1=2600MHz, F2=2601MHz
Page 4 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8015H
LNA for LTE mid-high band
Package Outline Dimensions
A
aaa
C
D
ccc
C
A
SIDE VIEW
E
A3
A2
aaa
C
LASER MARK FOR PIN1
IDENTIFICATION IN THIS AREA
TOP VIEW
e
0.050
A
A
A
A
ALL DIMENSIONS ARE IN MILLIMETERS.
SYMBOL
A
A2
A3
e
D
E
aaa
ccc
MILLIMETER
MIN.
NOR.
0.40
0.45
0.09
0.12
0.31
0.33
0.35
0.40
0.65
0.70
1.05
1.10
0.10
0.20
MAX.
0.50
0.15
0.35
0.45
0.75
1.15
MIN.
0.0157
0.0035
0.0122
0.0138
0.0256
0.0413
INCH
NOR.
0.0177
0.0047
0.0130
0.0157
0.0276
0.0433
0.0039
0.0079
MAX.
0.0197
0.0059
0.0138
0.0177
0.0295
0.0453
A
A
B
PIN1 ID
0.050
0.1±0.035
0.2±0.035
B
BOTTOM VIEW
0.1±0.035
0.2±0.035
A
0.2±0.035
0.2±0.035
Figure 2 MXD8015H outline dimension
Page 5 of 7
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
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