MXD8512A
0.5~4.0GHz SPST Antenna Tuning Switch
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MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch
General Description
The MXD8512A is a CMOS silicon-on-insulator
(SOI), single-pole, single-throw (SPST) switch. The
high linearity and ruggedness performance and
extremely low insertion loss makes the device an
ideal
choice
for
GSM/WCDMA/LTE
handset
Applications
GSM/WCDMA/LTE band and mode switching
Antenna tuning switch
Features
Broadband frequency range: 0.1 to 4.0 GHz
Low insertion 0.18dB @ 2.7 GHz
High P0.1dB of 43.5dBm
High Peak Vrf of 50V
Very Low Ron of 1.2 Ohm
Very Low Coff of 130fF
Positive low voltage control: VC = 1.0 to 3.0
V, VDD = 1.7 to 3.3 V, Small, QFN (6-pin,
0.7mm x 1.1mm x 0.377mm) package，
MSL1
antenna tuning application.
The MXD8512A SPST switch is provided in a
compact 0.7mm x 1.1mm x 0.377mm 6-lead QFN
package. A functional block diagram is shown in
Figure 1. The pin configuration and package are
shown in Figure 2. Signal pin assignments and
functional pin descriptions are provided in Table 1.
Functional Block Diagram and Pin Function
1
RF1
6
RF2
RF1
Logic and Supply
RF2
2
NC
5
GND
3
VDD
4
VC
VC
GND
VDD
Figure 1.Functional Block Diagram
Figure 2.Pin-out (Top View)
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MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch
Application Circuit
RF1
1
RF1
2
NC
MXD
8512A
4
RF2
RF2
5
GND
4
VC
C2
100pF
GND
VDD
3
VDD
C1
100pF
VC
Figure 3. MXD8512A Application Circuit
Table 1. Pin Description
Pin No.
1
2
3
4
Name
RF1
NC
VDD
VC
Description
RF port 1
No connect
DC power supply
DC control voltage
Pin No.
5
6
Name
GND
RF2
Description
Ground
RF port 2
Truth Table
Table 2.
Active Path
RF1 to RF2 OFF
RF1 to RF2 ON
Note:
“1” = 1.0 V to 3.00 V. “0” = –0 V to +0.3 V.
VC
0
1
Recommended Operation Range
Table 3.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
f1
V
DD
V
CTL_H
V
CTL_L
Min
0.5
1.7
1.0
0
Typ
-
2.8
1.8
0
Max
4.0
3.3
3.0
0.3
Units
GHz
V
V
V
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MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch
Specifications
Table 4.Electrical Specifications
Parameter
DC Specifications
Control voltage:
Low
High
Supply voltage
Supply current
Control current
RF Specifications
Insertion loss
IL
25
20
15
14
0.10
0.12
0.18
0.25
28
22
18
17
22
1.2
130
+43.5
50
-110
-105
-60
-60
-60
-60
-115
-115
5
5
15
-95
-85
-50
-50
-50
-50
-105
-105
10
10
30
0.12
0.18
0.25
0.3
dB
dB
dB
dB
dB
dB
dB
dB
dB
Ω
fF
dBm
V
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
μs
μs
μs
0.5 to 1.0 GHz
1.0 to 2.2 GHz
2.2 to 3.0 GHz
3.0 to 4.0 GHz
0.5 to 1.0 GHz
1.0 to 2.2 GHz
2.2 to 3.0 GHz
3.0 to 4.0 GHz
0.5 to 4.0 GHz
Switch on Path
Switch off Path
0.5 to 4.0 GHz,
ANT to RF1 and RF2
f0 = 500 to 4000 MHz,
25% duty cycle
f0 = 500 to 4000 MHz, PIN = +26
dBm
f0 = 824 to 915 MHz, PIN = +35
dBm
f0 = 1710 to 2690 MHz, PIN = +33
dBm
CW Carrier on RF Port, +20 dBm
CW Interferer on ANT port, -15 dBm
CW Carrier on RF Port, +20 dBm
CW Interferer on ANT port, -15 dBm
50% VCTL to 90% RF
50% VCTL to 10% RF
Power off state to any RF
switch state
Symbol
Min.
Specification
Typical
Max.
Units
Test Condition
V
CTL_L
V
CTL_H
V
DD
I
DD
I
CTL
0
1.0
1.7
0
1.8
2.8
100
1
0.3
3.0
3.3
150
5
V
V
V
μA
μA
V
DD
= 2.8 V
V
CTL
= 1.8 V
Isolation
Return loss
On Resistance
(RF1/2 to ANT)
OFF Capacitance
(RF1/2 to ANT)
Input 0.1 dB
compression point
Maximum
RF
operating voltage
LTE TX harmonic
(RF1/2 to ANT)
GSM LB harmonic
(RF1/2 to ANT)
GSM HB harmonic
(RF1/2 to ANT)
Second order
intermodulation
Third order
intermodulation
Switching on time
Switching off time
Startup time
ISO
|S
11
|
Ron
Coff
P
0.1dB
V
max
2f0
3f0
2f0
3f0
2f0
3f0
IMD2
IMD3
1.4
140
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MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch
Table 5. IMD2 Test Conditions
Band
1 Low
1 High
5 Low
5 High
In-band freq
MHz
2140
2140
881.5
881.5
CW Carrier
MHz
dBm
1950
1950
836.5
836.5
+20
+20
+20
+20
CW Interferer
MHz
dBm
190
4090
45
1718
-15
-15
-15
-15
Table 6. IMD3 Test Conditions
Band
1
5
In-band freq
MHz
2140
881.5
CW Carrier
MHz
dBm
1950
836.5
+20
+20
CW Interferer
MHz
dBm
1760
791.5
-15
-15
Absolute Maximum Ratings
Table 7. Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power CW (50 Ohm)
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model (HBM),
Class 1C
Machine Model (MM),
Class A
Charged device model (CDM),
Class III
Symbol
V
DD
V
CTL
P
IN
T
OP
T
STG
ESD_HBM
ESD_MM
ESD_CDM
Minimum
0
-35
-55
Maximum
+3.6
+3.3
+40
+90
+150
1000
100
500
Units
V
V
dBm
℃
℃
V
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
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