JIEJIE MICROELECTRONICS CO. , Ltd
JST16 Series
DESCRIPTION:
JST16 series triacs, with high ability to withstand the
shock loading of large current, provide high dv/dt rate
with strong resistance to electromagnetic interface. With
high commutation performances, 3 quadrants products
especially recommended for use on inductive load.
JST16A provides insulation voltage rated at 2500V RMS
and JST16F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
T1(1)
16A TRIACs
Rev.3.0
12
3
TO-220A 1
TO-220B
2 3
Insulated
Non-Insulated
2
12
3
TO-220F
Insulated
1
3
TO-263
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
Value
16
600 and 800 and 1200
Unit
A
V
T2(2)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-220A(Ins) (T
C
=86℃)
RMS on-state
current
TO-220B(Non-Ins)
(T
C
=107℃)
TO-220F(Ins) (T
C
=90℃)
TO-263 (T
C
=115℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
TEL
：+86-513-83639777
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40-150
-40-125
600/800/1200
600/800/1200
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
I
T(RMS)
16
A
I
TSM
160
A
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JST16 Series
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
128
50
4
1
5
A
2
s
A/μs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
3 Quadrants (V
DRM
/V
RRM
: 600/800V)
JST16-600/800V
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
Test Condition
Quadrant
BW
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
(dI/dt)c=1.7A/ms T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
MAX
80
MAX
MIN
MIN
60
1000
14
60
40
500
8.5
30
25
100
6
20
15
50
5
mA
V/μs
V/μs
MAX
MAX
MIN
70
50
CW
35
1.5
0.2
50
25
15
mA
SW
10
TW
5
mA
V
V
Unit
4 Quadrants (V
DRM
/V
RRM
: 600/800V)
JST16-600/800V
Symbol
Test Condition
Quadrant
B
Ⅰ-Ⅱ-Ⅲ
I
GT
V
GT
V
GD
I
L
I
H
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=12V R
L
=33Ω
Ⅳ
ALL
ALL
Ⅰ-Ⅲ-Ⅳ
Ⅱ
MAX
100
MAX
60
80
40
mA
MAX
70
MAX
MIN
70
1.5
0.2
50
mA
50
V
V
50
C
25
mA
Unit
TEL
：+86-513-83639777
- 2 / 7-
http://www.jjwdz.com
JST16 Series
ORDERING INFORMATION
JieJie Microelectronics CO. , Ltd
J
JieJie Microelectronics Co.,Ltd
ST
Triacs
16
A
-600
BW
I
T(RMS)
:16A
E:TO-263
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
BW:I
GT3
≤50mA
CW:I
GT3
≤35mA
SW:I
GT3
≤10mA
TW:I
GT3
≤5mA
B:I
GT3
≤50mA
I
GT4
≤70mA
C:I
GT3
≤25mA
I
GT4
≤50mA
600:V
DRM
/V
RRM
≥600V
800:V
DRM
/V
RRM
≥800V
1200:V
DRM
/V
RRM
≥1200V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
2.54
28.0
3.75
1.14
2.65
45°
1.70
2.95
0.045
0.104
45°
29.8
1.102
0.148
0.067
0.116
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
0.1
1.173
Inches
Typ.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
E
Φ
M
ax
8
3.
m
m
A
C2
F
A
B
C
C2
C3
D
E
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
L3
H
D
L1
C3
L2
V1
F
G
H
L1
B
G
C
L2
L3
TO-220A Ins
V1
TEL
：+86-513-83639777
- 4 / 7-
http://www.jjwdz.com
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