JIEJIE MICROELECTRONICS CO. , Ltd
P0080AES\P0080BES\P0080CESTSS
DESCRIPTION:
P0080AES\P0080BES\P0080CES are a type of semiconduct
component. They are designed in applications: modems,
telephones, line cards, answering machines, FAX machines,
SLICs, T1/E1, xDSL, PBXs and more.
Rev.4
SMA
1
2
FEATURES:
Low profile package.
Low on-state voltage.
Excellent capability of absorbing transient surge.
Quick response to surge voltage (ns Level).
Eliminates overvoltage caused by fast rising transients.
Moisture sensitivity level: Level 1.
Non degenerative.
Symbol
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃, RH=45%-75%,
unless otherwise noted)
Parameter
Storage temperature range
Operating junction temperature range
Repetitive peak pulse current
ESD rating per IEC61000-4-2:Contact&Air
Symbol
T
STG
T
J
I
PP
Value
-60 to +150
-40 to +125
See surge ratings
15
Unit
℃
℃
A
KV
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
Symbol
V
DRM
I
DRM
V
S
I
S
V
T
I
T
I
H
C
O
Parameter
Peak off-state voltage
Off-state current
Switching voltage
Switching current
-V
I
T
I
S
I
H
I
DRM
+V
V
T
V
DRM
V
S
V‐I Curve
+I
On-state voltage
On-state current
Holding current
Off-state capacitance
-1 / 5-
-I
TEL
:+86-513-83639777
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P0080AES/BES/CES
MARKING
JieJie Microelectronics CO. , Ltd
1409
P08BE
P08BE: Device Marking Code
1409: In ninth week, 2014
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, continued)
Part
Number
P0080AES
P0080BES
P0080CES
I
DRM
@V
DRM
μA
max
1
1
1
6
6
6
V
V
S
①
@I
S
V
max
15
15
15
mA
max
800
800
800
V
T
@ I
T
V
max
4
4
4
A
max
2.2
2.2
2.2
I
H
mA
min
30
30
30
C
O
②
pF
max
80
110
130
P08AE
P08BE
P08CE
Marking
①
Vs is measured at 100KV/s
②
Off-state capacitance is measured in V
DC
=2V,V
RMS
=1V, f=1MHz
SURGE RATINGS
Series
A
B
C
I
PP
(A) min
2×10μs
150
250
400
8×20μs
150
250
400
10×360μs
75
125
175
10×1000μs
50
80
100
ORDERING INFORMATION
TEL
:+86-513-83639777
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P0080AES/BES/CES
SOLDERING PARAMETERS
Reflow Condition
-Temperature Min (T
s(min)
)
Pre Heat
-Temperature Max(T
s(max)
)
-Time (Min to Max) (ts)
JieJie Microelectronics CO. , Ltd
Pb-Free assembly
(see FIG.2)
+150℃
+200℃
60-180 secs.
3℃/sec. Max
3℃/sec. Max
+217℃
60-150 secs.
+260(+0/-5)℃
30 secs.Max
6℃/sec. Max
8 min. Max
+260℃
FIG.2:
Reflow condition
tp
Average ramp up rate (Liquidus Temp (T
L
)to peak)
T
s(max)
to T
L
- Ramp-up Rate
Reflow
Peak Temp (T
p
)
Time within 5℃of actual Peak Temp (t
p
)
Ramp-down Rate
Time 25℃ to Peak Temp (T
P
)
Do not exceed
FIG.1:
tr × td pulse waveform
%I
PP
tr = rise time to peak value
td = decay time to half value
-Temperature(T
L
) (Liquidus)
-Temperature(t
L
)
T
P
Ramp-up
T
L
Temperature
T
S(max)
100
Peak value
Critical Zone
T
L
to T
P
t
L
Ramp-down
Preheat
50
Half value
T
S(min)
t
s
0
0 t
r
t(μs)
t
d
25
time to peak temperatue
(t 25
℃
to peak)
Time
FIG.3:
Normalized Vs change vs. junction
temperature
Percent of Vs change(%)
12
8
4
0
-4
-8
-40
-20
0
20
T
j
(
℃
)
40
60
80
100
120
140
FIG.4:
Normalized DC holding current vs. case
temperature
2.0
1.8
1.6
1.4
I
H
(T
j
)/I
H
(T
j
=25
℃
)
25℃
1.2
1.0
0.8
0.6
0.4
-40
-20
0
25℃
20
T
C
(
℃
)
40
60
80
100
120
140
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P0080AES/BES/CES
PACKAGE MECHANICAL DATA
B
JieJie Microelectronics CO. , Ltd
Dimensions
Ref.
Millimeters
Min.
A
B
C
D
2.60
4.15
1.25
0.95
4.90
0.051
0.15
2.00
2.00
2.30
1.80
0.071
Max.
3.00
4.65
1.65
1.52
5.30
0.203
0.31
2.44
Inches
Min.
0.102
0.163
0.049
0.037
0.193
0.002
0.006
0.079
0.079
0.091
C
A
Max.
0.118
0.183
0.065
0.060
0.209
0.008
0.012
0.096
H
D
F
E
K
J
G
E
F
G
H
J
K
J
L
DO-214AC (SMA)
L
TAPE AND REEL SPECIFICATION‐SMA
D0
P0 P2
F E
Cathode
W
Ref.
A0
B0
C
Dimensions
Millimeters
2.79 ± 0.3
5.33 ± 0.3
330.0
1.55 ± 0.1
1.75 ± 0.2
13.3 ± 0.3
5.5 ± 0.2
4.00 ± 0.2
4.00 ± 0.2
2.00 ± 0.2
12.0± 0.2
15.7 ± 2.0
Inches
0.110 ± 0.012
0.210 ± 0.012
13.0
0.061 ± 0.004
0.069 ± 0.008
0.524± 0.012
0.217 ± 0.008
0.157 ± 0.008
0.157 ± 0.008
0.079 ± 0.008
0.472 ± 0.008
0.618 ± 0.079
B0
A0
P1
D0
E
E1
F
P0
P1
P2
W
W1
OUTLINE
TAPING
UNIT WEIGHT
(g/PCS) typ.
0.066
REEL
(PCS)
5,000
PER CARTON
(PCS)
80,000
REEL
DIAMETERS
(mm)
330
TEL
:+86-513-83639777
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P0080AES/BES/CES
JieJie Microelectronics CO. , Ltd
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
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Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the fourth version which is made in 3-July-2017. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2017Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL
:+86-513-83639777
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http://www.jjwdz.com