JIEJIE MICROELECTRONICS CO. , Ltd
JCT655/855 Series
DESCRIPTION:
With high ability to withstand the shock loading of large
current, JCT655/855 SCRs provide high dv/dt rate
with strong resistance to electromagnetic interference.
They are especially recommended for use on solid
state relay, motorcycle, power charger, T-tools etc.
From all three terminals to external heatsink, JCTx55Z
provides a rated insulation voltage of 2500 V
RMS
,
complying with UL standards (File ref: E252906).
12
55A SCRs
Rev.6.0
3
TO-247S
1
2
3
2
TO-247J
1
3
12
3
TO-3P
Insulated
TG-C
K(1)
G(3)
A(2)
MAIN FEATURES
Symbol
V
DRM
/ V
RRM
I
T(RMS)
I
GT
JCT655
600V
55A
10 - 50 mA
JCT855
800V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
TO-3P Ins (T
C
=80℃)
RMS on-state current
TO-247S/TO-247J
(T
C
=83℃)
TG-C (T
C
=82℃)
Non repetitive surge peak on-state current
(tp=10ms)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
I
TSM
I
2
t
dI/dt
520
1350
150
A
A
2
s
A/μs
I
T(RMS)
55
A
Symbol
T
stg
T
j
V
DRM
V
RRM
Value
-40-150
-40-125
600/800
600/800
Unit
℃
℃
V
V
TEL
：+86-513-83639777
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http://www.jjwdz.com
JCT655/855 Series
JieJie Microelectronics CO. , Ltd
I
GM
P
GM
P
G(AV)
5
10
1
A
W
W
Peak gate current
Peak gate power
Average gate power dissipation (T
j
=125℃)
ELECTRICAL CHARACTERISTICS (T
j
=25
℃
unless otherwise specified
)
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
Test Condition
Value
MIN.
10
-
0.2
-
-
700
TYP.
15
-
-
-
-
-
MAX.
50
1.5
-
100
80
-
Unit
mA
V
V
mA
mA
V/μs
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃ R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=500mA
V
D
=2/3V
DRM
T
j
=125℃ Gate Open
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=80A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
C
=25℃
T
C
=25℃
T
C
=125℃
Value(MAX)
1.6
10
6
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-3P Ins
R
th(j-c)
junction to case(AC)
TO-247S/
TO-247J
TG-C
Value
0.65
0.60
0.62
℃/W
Unit
TEL
：+86-513-83639777
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http://www.jjwdz.com
JCT655/855 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
A
J
H
Ref.
Min.
A
15.50
20.80
19.70
1.80
1.90
1.00
4.80
1.90
2.20
0.41
Millimeters
Typ.
15.80
21.00
20.00
2.00
2.10
1.20
5.44
5.00
2.00
2.35
0.60
5.20
2.10
2.50
0.79
0.189
0.075
0.087
0.016
Max.
16.10
22.20
20.30
2.20
2.30
1.40
Min.
0.610
0.819
0.776
0.071
0.075
0.039
Dimensions
Inches
Typ.
0.622
0.828
0.787
0.079
0.083
0.047
0.214
0.197
0.079
0.093
0.024
0.205
0.083
0.098
0.031
Max.
0.634
0.874
0.799
0.087
0.091
0.055
B
B
C
D
E
C
K
D
E
F
G
H
J
K
L
G
F
TO-247J
L
FIG.1:
Maximum power dissipation versus RMS
on-state current
P(w)
80
FIG.2:
RMS on-state current versus case
temperature
I
T(RMS)
(A)
66
55
TO-247S/TO-247J
TG-C
TO-3P Ins
α=180°
60
44
40
33
22
20
11
0
0
11
I
T(RMS)
(A)
22
33
44
55
0
0
Tc (
℃
)
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
number of cycles
560
480
400
320
240
160
80
0
1
Number of cycles
10
100
1000
I
TSM
(A)
tp=10ms
One cycle
FIG.4:
On-state characteristics (maximum
values)
I
TM
(A)
600
100
Tj=Tjmax
10
Tj=25℃
1
0
1
2
V
TM
(V)
3
4
5
TEL
：+86-513-83639777
- 5 / 6-
http://www.jjwdz.com
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