JIEJIE MICROELECTRONICS CO. , Ltd
JST12 Series
DESCRIPTION:
JST12 series triacs, with high ability to withstand the
shock loading of large current, provide high dv/dt rate
with strong resistance to electromagnetic interface. With
high commutation performances, 3 quadrants products
especially recommended for use on inductive load.
JST12A provides insulation voltage rated at 2500V RMS
and JST12F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
12A TRIACs
Rev.2.0
12
3 TO-220A
Insulated
12
3 TO-220B
Non-Insulated
12
12
3
3 TO-220C
TO-220F
Insulated
T1(1)
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
Value
12
600 and 800 and 1200
Unit
A
V
1
2
G(3)
3
TO-263
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-220A(Ins) (T
C
=90℃)
RMS on-state
current
TO-220B(Non-Ins)/
TO-220C(T
C
=105℃)
TO-220F(Ins) (T
C
=79℃)
TO-263 (T
C
=115℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
TEL
：+86-513-83639777
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40-150
-40-125
600/800/1200
600/800/1200
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
I
T(RMS)
12
A
I
TSM
120
A
- 1 / 7-
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JST12 Series
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
72
50
4
1
5
A
2
s
A/μs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
3 Quadrants
Value
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
Test Condition
Quadrant
BW
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open T
j
=125℃
without snubber T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
MAX
80
MAX
MIN
MIN
60
1000
12
60
40
500
6.5
30
15
40
5.0
15
10
20
3.5
mA
V/μs
V/μs
MAX
MAX
MIN
70
50
CW
35
1.3
0.2
50
25
10
mA
SW
10
TW
5
mA
V
V
Unit
4 Quadrants
Value
Symbol
Test Condition
Quadrant
B
Ⅰ-Ⅱ-Ⅲ
I
GT
V
GT
V
GD
I
L
I
H
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=12V R
L
=33Ω
Ⅳ
ALL
ALL
Ⅰ-Ⅲ-Ⅳ
Ⅱ
MAX
100
MAX
50
80
25
mA
MAX
70
MAX
MIN
50
1.3
0.2
40
mA
50
V
V
50
C
25
mA
Unit
TEL
：+86-513-83639777
- 2 / 7-
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JST12 Series
dV/dt
(dV/dt)c
V
D
=2/3V
DRM
Gate Open T
j
=125℃
without snubber T
j
=125℃
JieJie Microelectronics CO. , Ltd
MIN
MIN
400
/
200
/
V/μs
V/μs
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=17A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.55
5
1
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-220A(Ins)
R
th(j-c)
junction to case(AC)
TO-220B(Non-Ins)/
TO-220C
TO-220F(Ins)
TO-263
Value
2.3
1.4
3.9
0.95
℃/W
Unit
ORDERING INFORMATION
J
JieJie Microelectronics Co.,Ltd
ST
Triacs
12
A
-600
BW
I
T(RMS)
:12A
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
C:TO-220C E:TO-263
BW:I
GT1-3
≤50mA
CW:I
GT1-3
≤35mA
SW:I
GT1-3
≤10mA
TW:I
GT1-3
≤5mA
B:I
GT1-3
≤50mA
I
GT4
≤70mA
C:I
GT1-3
≤25mA
I
GT4
≤50mA
600:V
DRM
/V
RRM
≥600V
800:V
DRM
/V
RRM
≥800V
1200:V
DRM
/V
RRM
≥1200V
TEL
：+86-513-83639777
- 3 / 7-
http://www.jjwdz.com
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