JIP61089B
JIEJIE MICROELECTRONICS CO., Ltd
JIP61089B Dual Programmable Thyristor Transient Voltage Suppressor
Rev.3.4
DESCRIPTION:
This device is especially designed to protect subscriber
line card interfaces (SLIC) against transient overvoltages.
Positive overloads are clipped with 2 diodes. Negative
surges are suppressed by 2 thyristors, their breakdown
voltage being referenced to -V
BAT
through the gate. This
component presents a very low gate triggering current (I
GT
)
in order to reduce the current consumption on printed
circuit board during the firing phase. A particular attention
has been given to the internal wire bonding. The “4-point”
configuration ensures reliable protection, eliminating the
overvoltage introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transients.
Device package type SOP-8
Device package type SOP-8
FEATURES:
Dual programmable transient suppressor.
Wide negative firing voltage range: V
GKRM
=-167V max.
Low dynamic switching voltage: V
FRM
and V
GK(BD)
Low gate triggering current: I
GT
=5mA max.
Peak pulse current: I
PP
=30A for 10/1000µs surge.
Holding current: I
H
=150mA min.
APPLICATION:
JIP61089B is designed to protect communication equipment such as SPC exchanger from being
damaged by transient overvoltages at the second level.
TESTING STANDARDS
Type
ITU-T K.20/21and K.45
Current
5/310
µs
70A
Wave Sharp
Voltage
10/700
µs
V
PP
/I
PP
3000V
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：+86-513-83639777
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JIP61089B
ELECTERICAL CAHRACTERISTIC
Symbol
I
DRM
I
H
V
BO
V
F
V
FRM
V
GK(BD)
I
GKS
I
GT
V
GT
C
KA
Parameters
Off-state current
Holding current
Break-over voltage
Forward voltage
Peak forward recovery voltage
Gate-cathode impulse break-over
voltage
Gate reverse current
Gate trigger current
Gate-cathode trigger voltage
Cathode-anode off-state
capacitance
JIEJIE MICROELECTRONICS CO., Ltd
+I
I
pp
I
F
V
BO
V
DRM
-V
I
DRM
V
F
+V
I
H
I
BO
-I
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃, RH=45%-75%,
unless otherwise noted)
Parameter
Storage temperature range
Junction temperature
Operating free-air temperature range
Non-repetitive peak on-state pulse current
(Telcordia (Bellcore) GR-1089-CORE,Issue 2,
10/1000µs
February)
(ITU-T K.20/21& K.45/44 open-circuit voltage
5/310µs
10/700µs)
(Telcordia (Bellcore) GR-1089-CORE, Issue
1.2/50µs
2, February )
Non-repetitive peak pulse voltage(10/700µs)
0.1s
1s
Non repetitive surge peak on-state current
5s
(sinusoidal) 60Hz
300s
900s
Maximum voltage LINE/GROUND
Maximum voltage GATE/LINE
Symbol
T
STG
T
J
T
A
Value
-40 to +150
-40 to +150
-40 to +85
Unit
℃
℃
℃
30
I
TSP
70
120
V
PP
3000
11
4.5
2.4
0.95
0.93
-170
-167
V
A
I
TSM
A
V
DRM
V
GKRM
V
V
Note1：5/310µs means current wave, and its rise time is 5µs, fall time is 310µs.
10/700µs means voltage wave, and its rise time is 10µs, fall time is 700µs.
TEL
：+86-513-83639777
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http://www.jjwdz.com
JIP61089B
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
Symbol
Parameter
JIEJIE MICROELECTRONICS CO., Ltd
Test conditions
Min.
Value
Typ. Max.
Unit
Parameters related to the diode
V
F
V
FRM
Forward voltage
Peak forward
recovery voltage
I
F
=5A, t
W
=200µs
2/10µs,I
F
=100A,Rs=50Ω,
di/dt=80A/µs
V
DRM
=-170V, V
GK
=0V
2/10µs,
I
TM
=-100A,Rs=50Ω,
di/dt=-80A/µs, V
GG
=-100V
I
T
=-1A, di/dt=1A/ms,
V
GG
=-100V
V
GG
=V
GK
=-167V,
V
KA
=0,T
J
=25℃
I
T
=-3A, t
P
(g)≥20µs,
V
GG
=-48V
I
T
=3A, t
P
(g)≥20µs,
V
GG
=-48V
f=1MHz,V
D
=1V,I
G
=0A，
V
D
=-3V
-
-
-
-
3
10
V
V
Parameters related to the protection thyristor
I
DRM
V
BO
I
H
I
GKS
I
GT
V
GT
C
AK
Off-state current
Break-over voltage
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
Anode-cathode
off-state capacitance
-
-
-150
-
-
-
-
-
-
-
-
-
-
-
-5
-112
-
-5
5
2.5
100
µA
V
mA
µA
mA
V
pF
SOP PACKAGE TOP VIEW AND DEVICE SYMBOL
Package (Top view)
Device symbol
TEL
：+86-513-83639777
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http://www.jjwdz.com
JIP61089B
ORDERING INFORMATION
JIEJIE MICROELECTRONICS CO., Ltd
MARKING
.
69B
69B
69B
：
Device marking code
XXXX
：
Date of manufacture
XXXX
TEST METHOD AND CIRCUIT
Holding current test circuit(test circuit 1)
This is a conduction-cutoff test. The test circuit can ascertain the size of holding current.
Test method
：
1. Short out DUT, regulating current in I
H
range；
2. Triggering DUT with I
PP
=10A, 10/1000µs surge current；
3. DUT needs to return to the off-state in the maximum 50ms.
This is a conduction-cutoff test. The test circuit can ascertain the size of holding current.
Test method
：
4. Shortout DUT, regulating current in I
H
range；
5. Triggering DUT with I
PP
=10A, 10/1000µs surge current；
6. DUT needs to return to the off-state in the maximum 50ms.
TEL
：+86-513-83639777
-4 / 6-
http://www.jjwdz.com
JIP61089B
V
FP
and V
DGL
test circuit(test circuit 2)
JIEJIE MICROELECTRONICS CO., Ltd
Pulse(µs)
T
rise
10
1.2
2
T
fall
700
50
10
V
P
(V)
1500
1500
2500
C1
(µF)
20
1
10
C2
(nF)
200
33
0
L
(µH)
0
0
1.1
R1
(Ω)
50
76
1.3
R2
(Ω)
15
13
0
R3
(Ω)
25
25
3
R4
(Ω)
25
25
3
I
PP
(A)
30
30
38
R
P
(Ω)
10
10
62
PACKAGE MECHANICAL DATA
c
L1'
Dimensions
Ref.
θ
Millimeters
Min.
Typ.
Max.
1.70
0.15
1.55
0.51
0.25
5.10
3.93
6.20
1.27
1.40
0.77
1.02
1.04
0.12
0°
8°
0°
Min.
0.055
0.002
0.053
0.015
0.007
0.185
0.153
0.228
0.045
0.024
0.039
Inches
Typ.
Max.
0.067
0.006
0.061
0.017
0.010
0.200
0.155
0.244
0.050
0.055
0.030
0.04
0.048
0.005
8°
E1
A
1.40
0.05
1.35
0.31
0.17
4.70
3.88
5.80
1.14
0.62
1.00
E
A1
A2
b
c
D
E
b
D
A2
L
L1
E1
e
L
L1
L1-L1'
θ
A
SOP-8
TEL
：+86-513-83639777
A1
e
-5 / 6-
http://www.jjwdz.com
Microchip MCU
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