JIEJIE MICROELECTRONICS CO. , Ltd
CP4200Sx Series TSS
DESCRIPTION:
CP4200Sx series are a type of semiconduct component.
They are designed to protect baseband equipment
from damaging overvoltage transients.
Rev.4.2
FEATURES:
Low profile package.
Low on-state voltage.
Excellent capability of absorbing transient surge.
Quick response to surge voltage (ns Level).
Eliminates overvoltage caused by fast rising transients.
Moisture sensitivity level: Level 1.
Non degenerative.
SMB
1
2
Symbol
ABSOLUTE MAXIMUM RATINGS
(T
A
=25ºC, RH=45%-75%,
unless otherwise noted)
Parameter
Storage temperature range
Operating junction temperature range
Repetitive peak pulse current
Symbol
T
STG
T
J
I
PP
Value
-60 to +150
-40 to +125
see next table
Unit
℃
℃
A
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
Symbol
V
DRM
I
DRM
V
S
I
S
V
T
I
T
I
H
C
O
Parameter
Peak off-state voltage
Off-state current
Switching voltage
Switching current
On-state voltage
On-state current
Holding current
Off-state capacitance
-I
-V
V
T
V
DRM
V
S
I
T
I
S
I
H
I
DRM
+V
V‐I Curve
+I
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CP4200Sx Series
MARKING
JieJie Microelectronics CO. , Ltd
1409
CP42B
CP42B : Device Marking Code
1409: In ninth week, 2014
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, continued)
I
DRM
@V
DRM
Part
Number
CP4200SB
CP4200SC
CP4200SD
μA
max
1
1
1
400
400
400
V
V
S
①
@I
S
V
max
520
520
520
mA
max
800
800
800
V
T
@ I
T
V
max
4
4
4
A
max
2.2
2.2
2.2
I
H
mA
max
100
100
100
C
O
②
pF
max
35
35
40
CP42B
CP42C
CP42D
Marking
①
Vs is measured at 100KV/s
②
Off-state capacitance is measured in V
DC
=2V, V
RMS
=1V, f=1MHz
SURGE RATINGS
Series
Surge peak
5/320μs
(10/700μs)
8/20μs
(1.2/50μs)
2/10μs
10/1000μs
B
I
PP
(A) min
100
250
250
80
C
I
PP
(A) min
150
400
500
100
D
I
PP
(A) min
200
600
800
200
ORDERING INFORMATION
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CP4200Sx Series
SOLDERING PARAMETERS
Reflow Condition
-Temperature Min (T
s(min)
)
Pre Heat
-Temperature Max(T
s(max)
)
-Time (Min to Max) (ts)
JieJie Microelectronics CO. , Ltd
Pb-Free assembly
(see FIG.2)
+150℃
+200℃
60-180 secs.
3℃/sec. Max
3℃/sec. Max
+217℃
60-150 secs.
+260(+0/-5)℃
30 secs. Max
6℃/sec. Max
8 min. Max
+260℃
FIG.2:
Reflow condition
tp
tr = rise time to peak value
td = decay time to half value
Average ramp up rate (Liquidus Temp (T
L
)to peak)
T
s(max)
to T
L
- Ramp-up Rate
Reflow
Peak Temp (T
p
)
Time within 5℃of actual Peak Temp (t
p
)
Ramp-down Rate
Time 25℃ to Peak Temp (T
P
)
Do not exceed
FIG.1:
tr × td pulse waveform
%I
PP
T
P
-Temperature(T
L
) (Liquidus)
-Temperature(t
L
)
100
Peak value
Ramp-up
T
L
Temperature
T
S(max)
Critical Zone
T
L
to T
P
t
L
Ramp-down
Preheat
50
Half value
T
S(min)
t
s
0
0 t
r
t(μs)
t
d
25
time to peak temperatue
(t 25
℃
to peak)
Time
FIG.3:
Normalized Vs change vs. junction
temperature
Percent of Vs change(%)
12
8
4
0
-4
-8
-40
-20
0
20
T
j
(
℃
)
40
60
80
100
120
140
FIG.4:
Normalized DC holding current vs. case
temperature
2.0
1.8
1.6
1.4
I
H
(T
j
)/I
H
(T
j
=25
℃
)
25℃
1.2
1.0
0.8
0.6
0.4
-40
-20
0
25℃
20
T
C
(
℃
)
40
60
80
100
120
140
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CP4200Sx Series
PACKAGE MECHANICAL DATA
B
JieJie Microelectronics CO. , Ltd
Dim ensions
Ref.
M illim eters
M in.
A
B
C
D
3.30
4.30
1.90
0.95
5.20
0.051
0.15
2.10
2.20
2.60
2.30
0.091
M ax.
3.94
4.80
2.20
1.52
5.60
0.203
0.31
2.40
Inches
M in.
0.130
0.169
0.075
0.037
0.205
0.002
0.006
0.083
0.087
0.102
M ax.
0.155
0.189
0.087
0.060
0.220
0.008
0.012
0.094
C
H
D
F
A
G
E
K
J
E
F
G
H
J
K
J
L
DO -214AA (SM B)
L
TAPE AND REEL SPECIFICATION‐SMB
D0
P0 P2
F E
Cathode
W
Ref.
A0
B0
C
Dimensions
Millimeters
3.76 ± 0.3
5.69± 0.3
330.0
1.55 ± 0.1
1.75 ± 0.2
13.3 ± 0.3
5.5 ± 0.2
4.00 ± 0.2
8.00 ± 0.2
2.00 ± 0.2
12.0± 0.2
15.7 ± 2.0
Inches
0.148 ± 0.012
0.224 ± 0.012
13.0
0.061 ± 0.004
0.069 ± 0.008
0.524± 0.012
0.217 ± 0.008
0.157 ± 0.008
0.3145 ± 0.008
0.079 ± 0.008
0.472 ± 0.008
0.618 ± 0.079
B0
A0
P1
D0
E
E1
F
P0
P1
P2
W
W1
OUTLINE
TAPING
UNIT WEIGHT
(g/PCS) typ.
0.098
REEL
(PCS)
3,000
PER CARTON
(PCS)
48,000
REEL
DIAMETERS
(mm)
330
TEL
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CP4200Sx Series
JieJie Microelectronics CO. , Ltd
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the 4.2nd version which is made in 31-Jan.-2018. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2018Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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