JIEJIE MICROELECTRONICS CO. , Ltd
SMAJ Series 400W Transient Voltage Suppressor
DESCRIPTION:
TVS diodes can be used in a wide range of applications
which like consumer electronic products, automotive
industries, munitions, telecommunications, aerospace
industries, and intelligent control systems.
Rev.4.1
SMA
FEATURES:
Low profile package.
Low inductance.
Excellent clamping capability.
400W peak pulse power capability at 10×1000µs waveform.
Typical I
R
less than 1µA above 10V.
Fast response time: typically less than 1.0ps from 0V to V
BR
min.
High temperature to reflow soldering:260℃/40s at terminals.
Plastic package has underwriters laboratory flammability 94V-0.
Meets MSL level 1, per J-STD020, LF maximum peak of 260℃.
For surface mounted applications in order to optimize board space.
Symbol
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃, RH=45%-75%,
unless otherwise noted)
Parameter
Operating junction and storage temperature
range
Steady state power dissipation at T
L
=75℃
Peak pulse power dissipation on 10/1000µs
waveform
Maximum instantaneous forward voltage at 25A
for unidirectional
Peak forward surge current, 8.3ms single half
sine wave（Note 1）
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Symbol
T
J
/T
STG
P
M(AV)
P
PP
V
F
I
FSM
R
θJL
R
θJA
Value
-55 to +150
3.3
400
5.0
60
30
120
Unit
℃
W
W
V
A
℃/W
℃/W
Notes：
：
1 Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only,
duty cycle=4 per minute maximum
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：+86-513-83639777
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400W SMAJ Series
JieJie Microelectronics CO. , Ltd
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, continued)
Part Number
Uni-polar
SMAJ350A
SMAJ400A
SMAJ440A
Bi-polar
SMAJ350CA
SMAJ400CA
SMAJ440CA
Marking
Uni
ZM
ZP
ZR
Bi
YM
YP
YR
V
R
V
350.0
400.0
440.0
I
R
@
V
R
µA
1
1
1
V
BR
@I
T
I
T
V
C
@I
PP
V
567.0
648.0
713.0
I
PP
①
min(V) max(V) mA
391.0
447.0
492.0
432.0
494.0
543.0
1
1
1
A
0.7
0.6
0.6
①
Surge waveform: 10/1000µs
V
R
: Stand-off voltage -- Maximum voltage that can be applied
V
BR
: Breakdown voltage
V
C
: Clamping voltage -- Peak voltage measured across the suppressor at a specified I
PP
I
R
: Reverse leakage current
ORDERING INFORMATION
RATINGS AND V-I CHARACTERISTICS CURVES
(T
A
=25℃,
unless otherwise noted)
FIG.1:V- I curve characteristics
(Uni-directional)
I
F
I
FIG.2:V- I curve characteristics
(Bi-directional)
I
I
PP
V
C
V
BR
V
R
I
R
V
F
I
T
V
V
C
V
BR
V
R
I
T
I
R
V
I
R
I
T
V
R
V
BR
V
C
I
PP
I
PP
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：+86-513-83639777
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400W SMAJ Series
FIG.3: Pulse waveform
I
PPM
(%I
RSM
)
150
tr = rise time to peak value
td = decay time to half value
tr=10µs
JieJie Microelectronics CO. , Ltd
FIG.4: Pulse derating curve
P
PP
derating in percentage(%)
100
80
60
100
Peak value
Half value
40
50
20
td
0
0
1.0
t(ms)
2.0
3.0
4.0
0
0
25
50
T
A
(
℃
)
75
100
125
150
175
SOLDERING PARAMETERS
Reflow Condition
-Temperature Min (T
s(min)
)
Pre
Heat
-Temperature Max(T
s(max)
)
-Time (Min to Max) (ts)
Average ramp up rate (Liquidus Temp
(T
L
)to peak)
T
s(max)
to T
L
- Ramp-up Rate
Reflow
-Temperature(T
L
)(Liquidus)
-Temperature(t
L
)
Peak Temp (T
p
)
Time within 5℃of actual Peak Temp (t
p
)
Ramp-down Rate
Time 25℃ to Peak Temp (T
P
)
Do not exceed
Pb-Free assembly
(see figure at right)
+150℃
+200℃
60-180 secs.
3℃/sec. Max
3℃/sec. Max
+217℃
60-150 secs.
+260(+0/-5)℃
20-40secs.
6℃/sec. Max
8 min. Max
+260℃
Temperature
Reflow condition
tp
T
P
Ramp-up
T
L
T
S(max)
Ramp-down
Preheat
T
S(min)
t
s
Critical Zone
T
L
to T
P
t
L
25
time to peak temperatue
(t 25
℃
to peak)
Time
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