JST150N30T2
30V,150A
N-Channel Mosfet
FEATURES
TO-252
RDS(ON)≤
2.6mΩ
@VGS=10V
RDS(ON)≤3.4mΩ @VGS=4.5V
Simple Drive Requirement
Low On-resistance
MARKING
N-CHANNEL MOSFET
YYXX
代表生产年周
Absolute Maximum Ratings
(T
C
=25℃ unless otherwise specified)
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Max.
TO-252-4R
30
±20
T
C
= 25℃
T
C
= 100℃
150
105
600
180
130
1.15
62
-55 to +175
T
C
= 25℃
Units
V
V
A
A
A
mJ
W
℃/W
℃
P
D
R
θJC
R
θJA
T
J
, T
STG
Power Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
1／5
JST150N30T2
Electrical Characteristics
(T
C
=25℃ unless otherwise specified)
Symbol
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0V,I
D
=250μA
V
DS
=30V, V
GS
= 0V,
T
J
=25℃
V
DS
=24V, V
GS
= 0V,
T
J
=125℃
V
DS
=0V,V
GS
= ±20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=15A
V
DS
=5V, I
D
=15A
30
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.6
1.8
2.4
48
4800
735
420
40
6
19
20
32
75
28
-
1
uA
10
±100
2.5
2.6
3.4
-
-
-
-
-
-
-
-
-
-
-
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
DSS
Zero Gate Voltage Drain Current
I
GSS
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain-Source on-Resistance
note3
On Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Dynamic Characteristics
V
DS
=25V, V
GS
=0V,
f = 1.0MHz
V
DS
=15V, I
D
=24A,
V
GS
=4.5V
Switching Characteristics
V
DS
=15V,
I
D
=1A, R
GEN
=1Ω,
V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
trr
Qrr
Maximum Continuous Drain to Source Diode Forward
Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
I
S
=1A,dI/dt=100A/μs
V
GS
= 0V, I
S
=30A
-
-
-
-
-
-
-
-
49
18
150
600
1.2
85
35
A
A
V
ns
nC
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃,V
DD
=25V,V
GS
=10V, L=0.1mH, I
AS
=60A, R
G
=25Ω
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2／5
JST150N30T2
Typical Performance Characteristics
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
3／5
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
