JST2301H
-20V,-3A
P-Channel Mosfet
FEATURES
SOT-23
RDS(ON)≤ 110mΩ @VGS=-4.5V
RDS(ON)≤ 140mΩ @VGS=-2.5V
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
MARKING
P-CHANNEL MOSFET
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θ
JA
T
J
T
stg
Value
-20
±12
-3
-12
0.4
312
150
-55 ~+150
Unit
V
A
W
℃/W
℃
1／4
JST2301H
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
a
Body diode voltage
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes :
a. Pulse Test : Pulse Width < 300µs, Duty Cycle
≤2%.
b. Guaranteed by design, not subject to production testing.
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-10V,V
GS
=-2.5V
ID=-3A
V
DS
=-10V,V
GS
=0V,f =1MHz
405
75
55
pF
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
SD
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±8V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-1A
V
GS
=-2.5V, I
D
=-1A
I
S
=-0.7A
76
102
-0.75
-20
-0.4
-24.5
-0.6
-1
±100
-1
110
140
-1.2
V
nA
µA
mΩ
V
Symbol
Test Condition
Min
Typ
Max
Units
6
0.7
1.3
11
35
30
10
20
60
50
20
ns
nC
V
DD
=-10V,
R
L
=10Ω, I
D
=-1A,
V
GEN
=-4.5V,R
g
=1Ω
2／4
stm32/stm8
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