JST4435
-30V P-Channel Mosfet
FEATURES
SOP-8
RDS(ON)≤ 23m
Ω
@VGS=-10V
RDS(ON)≤34m
Ω
@VGS=-4.5V
APPLICATIONS
Load Switch
Power Management
MARKING
P-CHANNEL MOSFET
YYMM:Date Code(year&month)
Absolute Maximum Ratings
(T
C
=25℃ unless otherwise specified)
Symbol
bol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
T
J
, T
STG
Param
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
note1
Power Dissipation
T
A
= 25℃
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
C
= 25℃
T
C
= 100℃
Max.
-30
±20
-10
-8
-50
3.0
.
42
-55 to +150
℃/W
℃
Units
V
V
A
A
A
Version :J
1／5
JST4435
Electrical Characteristics
(T
C
=25℃ unless otherwise specified)
Symbol
bol
Off Characteristic
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain-Source on-Resistance
note2
Param
Test Condition
Min.
Typ.
Max.
Units
V
GS
=0V,I
D
= -250μA
V
DS
= -30V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-10V, I
D
=-9.1A
V
GS
=-4.5V, I
D
=-7.0A
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-1.5
16
21
1550
327
278
30
5.3
5.
7.6
7.
14
20
95
65
-
-1
±100
-2.4
23
34
-
-
-
-
-
-
-
-
-
-
V
μA
nA
V
mΩ
On Characteristics
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Maximum Continuous Drain to Source Diode Forward
Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
Voltage
V
GS
= 0V, I
S
= -10A
V
DD
= -15V, I
D
= -6A,
V
GS
=-10V, R
GEN
=2.5Ω
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= -15V, I
D
= -9.1A,
V
GS
= -10V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Switching Characteristics
-
-
-
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
-
-
-
-
-
-0.8
-10
-50
-1.2
A
A
V
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Version :J
2／5
嵌入式系统
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