JST3400
30V,5.8A
N-Channel Mosfet
FEATURES
SOT-23
RDS(ON)≤ 33mΩ @VGS=10V
RDS(ON)≤ 39mΩ @VGS=4.5V
RDS(ON)≤ 60mΩ @VGS=2.5V
APPLICATIONS
Load/Power Switching
Interfacing Switching
MARKING
N-CHANNEL MOSFET
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θ
JA
T
J
T
stg
Value
30
±12
5.8
30
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
1／5
JST3400
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
a
Body diode voltage
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes :
a. Pulse Test : Pulse Width < 300µs, Duty Cycle
≤2%.
b. Guaranteed by design, not subject to production testing.
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V,R
L
=2.7Ω,
V
GS
=10V,R
GEN
=3Ω
V
DS
=15V,V
GS
=4.5V,I
D
=5.8A
V
DS
=15V,V
GS
=0V,f =1MHz
108
84
10
1.6
3.1
5
7
40
6
nS
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±12V
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3A
I
S
=1A
21
25
36
0.8
30
0.7
31.5
1
1.4
±100
1
33
39
60
1
V
V
nA
µA
mΩ
Symbol
Test Condition
Min
Typ
Max
Units
1155
pF
2／5
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