HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
68V/70A
R
DS(ON)
= 6.8 m(typ.) @ V
GS
=10V
Pin Description
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
G
D
S
D
S
G
TO-251-3L
Applications
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
D
HY1607
YYXXXJWW G
U
HY1607
YYXXXJWW G
D : TO-252-2L
U : TO-251-3L
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
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1
V1.1
HY1607D/U/V
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
68
±25
175
-55 to 175
70
280**
70
60
75
37.5
2
110
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
280**
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1607
Min.
Typ.
-
-
-
3
-
6.8
Max.
Unit
V
GS
=0V, I
DS
=250A
V
DS
=68V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250A
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=35A
I
SD
=35A, V
GS
=0V
I
SD
=35A, dl
SD
/dt=100A/s
68
-
-
2
-
-
-
1
10
4
±100
8.5
V
A
V
nA
m
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
33
60
1
-
-
V
ns
nC
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2
V1.1
HY1607D/U/V
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1607
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=34V, R
G
= 5
,
I
DS
=35A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.5
3200
351
290
14
13
20
7
-
-
-
-
-
-
-
-
ns
pF
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=55V, V
GS
=10V,
I
DS
=35A
-
-
-
84
13
27
-
-
-
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
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3
V1.1
HY1607D/U/V
Typical Operating Characteristics
Power Dissipation
175
Drain Current
90
I
D
- Drain Current (A)
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
o
P
tot
- Power (W)
150
125
100
75
50
80
70
60
50
40
30
20
25
0
10
0
T
C
=25 C,V
G
=10V
0
20
40
60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
T
c
- Case Temperature (°C)
Safe Operation Area
600
I
D
- Drain Current (A)
100
Rd
s(o
n)
Lim
it
100us
1ms
10ms
10
1
DC
0.1
0.01
T
C
=25 C
o
0.1
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
10
Normalized Effective Transient
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
0.01
Single
0.02
Mounted on minimum pad
o
R
JA
: 110 C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
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4
V1.1
HY1607D/U/V
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V
GS
= 6,7,8,9,10V
140
8.0
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (m)
120
5.5V
7.5
V =10V
GS
7.0
I
D
- Drain Current (A)
100
80
60
5V
40
20
0
4.5V
6.5
6.0
5.5
0
1.0
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
100
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
17
I
DS
=35A
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
I
DS
=250
A
R
DS(ON)
- On - Resistance (m)
15
13
11
9
7
5
4
5
6
7
8
9
10
Normalized Threshold Vlotage
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
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5
V1.1
stm32/stm8
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