HY3712P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
•
125V/170A
R
DS(ON)
= 6.3 m(typ.) @ V
GS
=10V
Pin Description
•
•
•
100% avalanche tested
G
D
S
G
D
S
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
TO-220FB-3M
TO-263-2L
TO-220FB-3L
G
G
D
D
S
S
G
D
S
TO-3PM-3S
Applications
Switching application
Power Management for Inverter Systems.
TO-220MF-3L
TO-3PS-3L
Ordering and Marking Information
P
HY3712
YYXXXJWW G
N-Channel MOSFET
Package Code
M
HY3712
YYXXXJWW G
B
HY3712
YYXXXJWW G
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PM-3S
Date Code
YYXXX WW
M : TO-220FB-3M
PS: TO-3PS-3L
PS
HY3712
YYXXXJWW G
PM
HY3712
YYXXXJWW G
Assembly Material
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements
to this pr-oduct and/or to this document at any time without notice.
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1
V1.0
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
125
±25
175
-55 to 175
170
585**
170
124
339
170
0.44
62.5
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
1155***
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=100V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY3712
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250A
V
DS
=125V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250A
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=85A
I
SD
=85A, V
GS
=0V
I
SD
=85A, dl
SD
/dt=100A/s
125
-
-
2.0
-
-
-
-
-
3.0
-
6.3
-
1
10
4.0
±100
7.5
V
A
V
nA
m
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
70
110
1
-
-
V
ns
nC
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2
V1.0
HY3712P/M/B/PS/PM
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY3712
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=62.5 V, R
G
= 6
,
I
DS
=85A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
3.0
8162
980
509
35
46
95
52
-
-
-
-
-
-
-
-
ns
pF
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
.
-
V
DS
=100V, V
GS
=10V,
I
DS
=85A
-
-
189
29
70
-
-
-
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
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3
V1.0
HY3712P/M/B/PS/PM
Typical Operating Characteristics
Power Dissipation
350
300
Drain Current
180
160
limited by package
I
D
- Drain Current (A)
o
140
120
100
80
60
40
20
P
tot
- Power (W)
250
200
150
100
50
0
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
0
T
C
=25 C,V
G
=10V
0
20
40 60 80 100 120 140 160 180
200
o
T
c
- Case Temperature (°C)
T
c
- Case Temperature (°C)
Safe Operation Area
I
D
- Drain Current (A)
1000
100
Rd
s(o
n)
Lim
it
100us
1ms
10ms
10
DC
1
0
0.01
T
C
=25 C
o
0.1
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Normalized Effective Transient
Duty = 0.5
0.1
0.1
0.2
0.01
0.02
0.01
0.05
0.001
Single
Mounted on minimum pad
o
R
JA
: 62.5 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
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4
V1.0
HY3712P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
240
210
180
5V
V
GS
= 5.5,6,7,8,9,10V
9.0
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (m)
8.0
I
D
- Drain Current (A)
150
120
90
4V
60
30
0
0.0
4.5V
V =10V
GS
7.0
6.0
5.0
1.0
2.0
3.0
4.0
5.0
6.0
4.0
0
40
80
120
160
200
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
16
I
DS
=85A
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
I
DS
=250
A
R
DS(ON)
- On - Resistance (m)
14
12
10
8
6
4
4
5
6
7
8
9
10
Normalized Threshold Vlotage
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
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5
V1.0
嵌入式系统
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