HY3410P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
•
100V/140A
R
DS(ON)
= 6.2 m(typ.) @ V
GS
=10V
Pin Description
•
•
•
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
D
G
D
S
G
D
S
S
TO-220FB-3S
TO-263-2L
TO-220FB-3L
Applications
Switching application
Power Management for Inverter Systems.
G
G
D
D
S
S
G
D
S
TO-3PM-3S
TO-220MF-3L
TO-3PS-3L
Ordering and Marking Information
P
HY3410
YYXXXJWW G
M
HY3410
YYXXXJWW G
B
HY3410
YYXXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PM-3S
Date Code
YYXXX WW
M : TO-220FB-3S
PS: TO-3PS-3L
MF: TO-220MF-3L
Assembly Material
G : Lead Free Device
PS
HY3410
YYXXXJWW G
PM
HY3410
YYXXXJWW G
MF
HY3410
YYXXXJWW G
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1
V1.0
HY3410P/M/B/PS/PM/MF
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
100
±25
175
-55 to 175
140
550**
140
100
285
143
0.53
62.5
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
992***
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=80V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY3410
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250A
V
DS
=100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250A
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=70A
I
SD
=70A, V
GS
=0V
I
SD
=70A, dl
SD
/dt=100A/s
100
-
-
2.0
-
-
-
-
-
3.0
-
6.2
-
1
10
4.0
±100
7.5
V
A
V
nA
m
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
65
103
1
-
-
V
ns
nC
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2
V1.0
HY3410P/M/B/PS/PM/MF
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY3410
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=50V, R
G
= 6
,
I
DS
=70A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.7
6140
943
490
23
39
86
46
-
-
-
-
-
-
-
-
ns
pF
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
.
-
V
DS
=80V, V
GS
=10V,
I
DS
=70A
-
-
130
25
32
-
-
-
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
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3
V1.0
HY3410P/M/B/PS/PM/MF
Typical Operating Characteristics
Power Dissipation
350
300
Drain Current
180
160
limited by package
I
D
- Drain Current (A)
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
o
P
tot
- Power (W)
140
120
100
80
60
40
20
0
T
C
=25 C,V
G
=10V
0
20
40 60 80 100 120 140 160 180
200
o
250
200
150
100
50
0
T
c
- Case Temperature (°C)
Safe Operation Area
T
c
- Case Temperature (°C)
I
D
- Drain Current (A)
1000
Rd
s(o
n)
Lim
it
100
100us
1ms
10ms
10
DC
1
0
0.01
T
C
=25 C
o
0.1
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
o
R
JA
: 62.5 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
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4
V1.0
HY3410P/M/B/PS/PM/MF
Typical Operating Characteristics (Cont.)
Output Characteristics
240
V
GS
= 5.5,6,7,8,9,10V
210
9.5
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (m)
180
8.5
I
D
- Drain Current (A)
150
120
5V
7.5
V =10V
GS
4.5V
90
60
30
0
0.0
4V
6.5
5.5
1.0
2.0
3.0
4.0
5.0
6.0
4.5
0
40
80
120
160
200
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
16
I
DS
=70A
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
I
DS
=250
A
R
DS(ON)
- On - Resistance (m)
14
12
10
8
6
4
4
5
6
7
8
9
10
Normalized Threshold Vlotage
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
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5
V1.0
FPGA/CPLD
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