HY050N08P/B
N-Channel Enhancement Mode MOSFET
Feature Description
85V/105A
R
DS(ON)
= 4.7mΩ(typ.)@V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
G
D
D
Pin Description
S
G
S
Applications
Switch application
DC/DC Converter
Ordering and Marking Information
Package Code
P
B
P:TO-220FB-3L
Date Code
YYXXX WW
B:TO-263-2L
Assembly Material
G:Lead Free
HY050N08
YYXXXJWW G
HY050N08
YYXXXJWW G
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HY050N08P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(Tc=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Tc=25°C
85
±20
175
-55 to 175
105
V
V
°C
°C
A
Mounted on Large Heat Sink
I
DM
I
D
Pulsed Drain Current *
Continuous Drain Current
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
P
D
R
JC
R
JA
E
AS
Note:
*
**
***
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case**
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy ***
L=0.3mH
Tc=100°C
420
105
74
166
83
0.9
62.5
378
A
A
A
W
W
°C/W
°C/W
mJ
Repetitive rating pulse width limited by max.junction temperature.
Drain current is limited by junction temperature
Limited by T
J
max , starting T
J
=25°C,
L =
0.3mH,
VD=
68V, V
GS
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS=
0V
,I
DS
=250μA
Parameter
Test Conditions
HY050N08
Min
85
-
-
2
-
-
-
-
-
Typ.
-
-
-
3
-
4.7
0.9
53
78
Max
-
1
5
4
±100
5.5
1.2
-
-
Unit
V
μA
μA
V
nA
mΩ
V
ns
nC
V
DS
=85V,V
GS
=0V
T
J
=55°C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
20V,V
DS
=0V
V
GS
=10V,I
DS
=40A
I
SD
=40A,V
GS
=0V
I
SD
=40A,dI
SD
/dt
=100A/μs
Diode Characteristics
V
SD
*
t
rr
Q
rr
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2
V1.0
HY050N08P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY050N08
Min
Typ.
Max
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=68V, V
GS
=10V,
I
D
=30A
-
-
-
64.3
15.2
19.5
-
-
-
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=20V,R
G
=4
Ω,
I
DS
=40A,V
GS
=10V
V
GS
=0V
,
V
DS
=0V,F=1
MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
3.8
3417
1649
76
20
30
24
21
-
-
-
-
-
-
-
-
ns
pF
Ω
Gate Charge
Note: *Pulse test pulse width
≤
300us duty cycle
≤
2%
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3
V1.0
HY050N08P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
Tc-Case Temperature(
)
I
D
-Drain Current(A)
Tc-Case Temperature( )
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
Normalized Transient
Z jc
I
D
-Drain Current(A)
Thermal
Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
Figure 5: Output Characteristics
V
DS
-Drain-Source Voltage (V)
R
DS(ON)
-ON-Resistance(Ω)
I
D
-Drain Current(A)
I
D
-Drain Current(A)
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4
V1.0
HY050N08P/B
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (
)
I
S
-Source Current (A)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
)
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5
V1.0
PCB设计
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