HY1303C
Single N-Channel Enhancement Mode MOSFET
Features
•
30
V/ 30 A
R
DS(ON)
= 4.2 m(typ.) @ V
GS
=10 V
R
DS(ON)
= 5.5 m(typ.) @ V
GS
4.5 V
Pin Description
D D D D
•
High Cell Desity for low Rds(on)
•
Halogen Device Available
Pin1
G S S S
DFN3*3-8L
Applications
Battery pack protection
Power tool
Ordering and Marking Information
Single N-Channel MOSFET
Package Code
C
C : DFN8L(0303)
Date Code
YYXXX WW
Assembly Material
C : Green Device
HY1303
YYXXXJWW C
Note:
H
YI
lead-free pr od uct s co ntain moldin g comp ounds/die att ach materials and 100% matte tin plate
H
YI
lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
H YI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
termination finish; which are fully compliant with RoHS.
advise customers to obtain the latest version of relevant information to verify before placing orders.
H
YI
reserves the right to make changes to improve reliability or manufacturability without notice, and
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1
HY1303C
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JA
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=70°C
T
C
=25°C
T
c
=70°C
Parameter
Rating
30
±20
150
-55 to 150
15
108**
30
19
3.1
2
40
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1303
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250A
V
DS
=30V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250A
V
GS
=±20V, V
DS
=0V
V
GS
=10V,I
DS
= 6 A
V
GS
=4.5V, I
DS
=4 A
30
-
1.0
-
-
-
-
-
1.6
-
4.2
5.5
-
1
2.5
±100
5.2
6.8
V
A
V
nA
m
m
R
DS(ON)
*
Drain-Source On-state Resistance
Diode Characteristics
V
SD
*
Diode Forward Voltage
I
SD
=1 A, V
GS
=0V
-
0.7
1.1
V
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2
HY1303C
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY1303
Min.
Typ.
Max.
Unit
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
G
=6
,
I
DS
=15A, V
GS
=10V,
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
-
-
2351
253
146
15
13
39
10
-
-
-
-
-
-
-
ns
pF
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
.
-
V
DS
=24V, V
GS
=10V,
I
DS
=15A
-
-
46
3.9
8.5
-
-
-
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
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3
HY1303C
Typical Operating Characteristics
Power Dissipation
I
D
- Drain Current (A)
5
35
30
25
20
15
10
Drain Current
P
tot
- Power (W)
4
3
2
1
T
C
=25 C
0
0
20 40 60 80 100 120 140 160 180 200
o
5
0
0
T
C
=25 C,V
G
=4.5V
20 40 60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
Safe Operation Area
600
T
c
- Case Temperature (°C)
I
D
- Drain Current (A)
100
10
10us
Rd
s(o
n)
Lim
it
1
T
J(Max)
=150 C
T =25 C
o
o
DC
100us
1ms
10ms
0.1
0.01
0.1
1
10
100
500
V
DS
- Drain - Source Voltage (V)
100
Thermal Response ( Z thJA ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
C
0.1
0.01
P
dm
t1
Notes:
t2
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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4
HY1303C
Typical Operating Characteristics (Cont.)
Output Characteristics
40
35
30
25
20
15
10
5
0
10V
4.5V
3V
Drain-Source On Resistance
8
7
6
5
4
3
2
1
0
V
GS
=4.5V
R
DS(ON)
- On - Resistance (m)
I
D
- Drain Current (A)
V
GS
=10V
2.5V
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
8
I
DS
=6A
7
6
5
4
3
2
1
1.8
1.6
Gate Threshold Voltage
I
DS
=250
A
R
DS(ON)
- On - Resistance (m)
Normalized Threshold Vlotage
0
2
4
6
8
10
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
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5
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