HY10P10D/U
P-Channel Enhancement Mode MOSFET
Feature
-100V/-10A
R
DS(ON)
= 187mΩ(typ.)@V
GS
= -10V
R
DS(ON)
= 208mΩ(typ.)@V
GS
= -4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
G
D
S
D
S
Pin Description
G
TO-251-3L
Applications
Power Management for Inverter Systems
Ordering and Marking Information
Package Code
P-Channel MOSFET
HY10P10
YYXXXJWW G
D
HY10P10
YYXXXJWW G
U
D: TO-252-2L
Date Code
YYXXX WW
U: TO-251-3L
Assembly Material
G:Halogen Free
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.1
HY10P10D/U
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Note:
*
**
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy **
L=0.5mH
Tc=25°C
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
Parameter
Rating
-100
±20
175
-55 to 175
-10
-40
-10
-7
31.3
15.6
4.8
110
85
Unit
V
V
°C
°C
A
A
A
A
W
W
°C/W
Common Ratings
(Tc=25°C Unless Otherwise Noted)
Mounted on Large Heat Sink
°C/W
mJ
Repetitive rating；pulse width limited by max.junction temperature.
Limited by T
J
max , starting T
J
=25°C,
L =
0.5mH,
VD=-80V
,
V
GS
=-10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source LeakageCurrent
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
V
GS=
0V,I
DS
=-250μA
Parameter
Test Conditions
HY10P10
Min
-100
-
-
-1
-
Typ.
-
-
-
-2
-
187
208
-
-
-
-0.8
30
42
-1
-10
-3
±10
225
240
-1.2
-
-
Max
Unit
V
μA
μA
V
μA
mΩ
V
DS
=-100V,V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250μA
V
GS
=
±20V,V
DS
=0V
V
GS
=-10V,I
DS
=-10A
V
GS
=-4.5V,I
DS
=-8A
I
SD
=-10A,V
GS
=0V
I
SD
=-10A,dI
SD
/dt=100A/μs
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
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2
V1.1
HY10P10D/U
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY10P10
Min
-
-
-
-
-
V
DD
=-50V,R
G
=6Ω,
I
DS
=-10A,V
GS
=-10V
-
-
-
-
-
-
Typ.
2
1034
340
210
19
25
62
27
30
6
8.4
Max
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=-80V, V
GS
=-10V，
I
D
=-10A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=0V
,
V
DS
=0V,F=1
MHz
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
Ω
Gate Charge
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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3
V1.1
HY10P10D/U
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
Tc-Case Temperature(℃)
-I
D
-Drain Current(A)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
-I
D
-Drain Current(A)
Normalized Transient
Z
θ
jc
Thermal
Impedance
-V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
R
DS(ON)
-ON-Resistance(mΩ)
Figure 5: Output Characteristics
-I
D
-Drain Current(A)
-V
DS
-Drain-Source Voltage (V)
-I
D
-Drain Current(A)
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4
V1.1
HY10P10D/U
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
-I
S
-Source Current (A)
-V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
Voltage (V)
C-Capacitance(pF)
-V
DS
-Drain-Source Voltage (V)
-V
GS
-Gate-Source
Q
G
-Gate Charge (nC)
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5
V1.1
PCB设计
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