HY4004P/B
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
40V/208A
R
DS(ON)
= 2.5 m(typ.) @ V
GS
=10V
Pin Description
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
S
GD
GD
S
TO-263-2L
TO-220FB-3L
Applications
•
•
Switching application
Power Management for
DC/DC
Ordering and Marking Information
N-Channel MOSFET
P
HY4004
B
HY4004
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
YYXXXJWW G YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
www.hymexa.com
1
V1.0
HY4004P/B
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
T
C
=25°C
Parameter
Rating
40
±20
175
-55 to 175
208
750**
208
138
217
108
0.69
62.5
L=0.5mH
1.4***
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
= 25°C
T
C
= 25°C
T
C
T
C
= 100°C
= 25°C
T
C
T
C
=100°C
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Avalanche Energy, Single Pulsed
Avalanche Ratings
J
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=32V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY4004
Min.
40
-
-
2.0
-
-
-
-
-
Typ.
-
-
-
3.0
-
2.5
0.8
37
60
Max.
-
1
10
4.0
±100
3.2
1.2
-
-
Unit
V
GS
=0V, I
DS
=250A
V
DS
= 0V
=40V, V
GS
T
J
= 85°C
V
DS
=V
GS
, I
DS
=250A
V
GS
=±20V, V
DS
0V
=
V
GS
=10V, I
DS
=104A
I
SD
=104 A, V
GS
=0V
I
SD
=104A,
dl
SD
/dt=100A/s
V
A
V
nA
m
V
ns
nC
Diode Characteristics
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2
V1.0
HY4004P/B
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25C Unless Otherwise Noted)
Test Conditions
HY4004
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.0
5712
1465
596
35
20
45
62
158
30
66
Max.
-
-
-
-
-
-
-
-
-
-
-
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=20V, R
G
=6
,
I
DS
=104A, V
GS
=10V,
V
GS
=0V,V
DS
0V,F 1MHz
= =
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
ns
Gate Charge Characteristics
V
DS
=32V, V
GS
=10V,
I
DS
=104A
nC
Note * : Pulse test ; pulse width
300
s, duty cycle2%.
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3
V1.0
HY4004P/B
Typical Operating Characteristics
Power Dissipation
275
Drain Current
I
D
- Drain Current (A)
212
200
175
150
125
100
75
250
limited by package
P
tot
- Power (W)
200
150
100
50
0
T
C
=25 C
0
20 40 60 80 100 120 140 160 180 200
o
50
25
T
C
=25 C,V
G
=10V
0
20 40 60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
Safe Operation Area
1000
it
Lim
n)
(o
ds
R
T
c
- Case Temperature (°C)
I
D
- Drain Current (A)
100us
100
10ms
1ms
10
DC
1
0.1
1
10
100
400
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
o
R
JA
: 62.5 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
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4
V1.0
HY4004P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
400
V
GS
= 5.5,6,7,8,9,10V
350
300
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
GS
=10V
Drain-Source On Resistance
250
200
150
100
50
0
0.0
5V
4.5V
4V
1.0
2.0
3.0
4.0
5.0
6.0
R
DS(ON)
- On - Resistance (mΩ)
I
D
- Drain Current (A)
0
50
100
150
200
250
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
7
I
DS
=104A
6
1.4
1.6
Gate Threshold Voltage
I
DS
=250
μ
A
R
DS(ON)
- On - Resistance (mΩ)
5
4
3
2
1
0
Normalized Threshold Voltage
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
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5
V1.0
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