HY1915P/B
N-Channel Enhancement Mode MOSFET
Feature
150V/85A
R
DS(ON)
=15mΩ(typ.)@V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Pin Description
Applications
Power Switching application
Uninterruptible Power Supply
Motor control
Ordering and Marking Information
Package Code
N-Channel MOSFET
HY1915
P
HY1915
B
P :TO-220FB-3L
Date Code
YYXXX WW
B:TO-263-2L
YYXXXJWWG
YYXXXJWWG
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V2.0
HY1915P/B
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Note:
*
**
***
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
L=0.3mH
Tc=25°C
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
Parameter
Rating
150
±20
175
-55 to 175
85
340
85
60
263
132
0.57
62
655
Unit
V
V
°C
°C
A
A
A
A
W
W
°C/W
°C/W
Common Ratings
(Tc=25°C Unless Otherwise Noted)
Mounted on Large Heat Sink
mJ
Repetitive rating；pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
Limited by T
J
max , starting T
J
=25°C,
L =
0.3mH,
VDS=100V
,
V
GS
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS=
0V,I
DS
=250μA
Parameter
Test Conditions
HY1915
Min
150
-
-
3.0
-
-
-
-
-
Typ.
-
-
-
3.8
-
15
0.85
48
78
Max
-
1.0
50
5.0
±100
18
1.3
-
-
Unit
V
μA
μA
V
nA
mΩ
V
ns
nC
V
DS
=150V,V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
±20V,V
DS
=0V
V
GS
=10V,I
DS
=30A
I
SD
=30A,V
GS
=0V
I
SD
=30A,dI
SD
/dt=100A/μs
Diode Characteristics
V
SD
*
t
rr
Q
rr
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2
V2.0
HY1915P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY1915
Min
-
-
-
-
-
V
DD
=100V,R
G
=2.5Ω,
I
DS
=30A,V
GS
=10V
-
-
-
-
-
-
Typ.
3.1
5125
384
161
28
30
95
40
103
35
42
Max
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
100V, V
GS
=10V，
I
D
=30A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=0V
,
V
DS
=0V,F=1
MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
Ω
Gate Charge
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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3
V2.0
HY1915P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Power Dissipation (w)
Figure 2: Drain Current
Tc-Case Temperature(℃)
I
D
-Drain Current(A)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
Normalized Transient
Zθjc
I
D
-Drain Current(A)
Thermal
Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
R
DS(ON)
-ON-Resistance(mΩ)
Figure 5: Output Characteristics
I
D
-Drain Current(A)
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
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4
V2.0
HY1915P/B
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Normalized On-Resistance
Tj-Junction Temperature (℃)
I
S
-Source Current (A)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (nC)
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5
V2.0
PCB设计
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