HY4504B6
N-Channel Enhancement Mode MOSFET
Feature
40V/322A
R
DS(ON)
= 1.5mΩ(typ.) @V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Halogen
Free and Green Devices Available
(RoHS Compliant)
Pin1
TO-263-6L
Pin7
Pin Description
Pin4
Applications
Switch application
Brushless Motor Drive
DC-DC
Electric Power Steering
Pin2,3,5,6,7
N-Channel MOSFET
Pin1
Ordering and Marking Information
Package Code
HY4504
B6
B6:TO-263-6L
Date Code
YYXXX WW
Assembly Material
G:Halogen
Free
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-
Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to
this pr-oduct and/or to this document at any time without notice.
www.hymexa.com
V1.0
1
HY4504B6
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
JC
R
JA
E
AS
Note:
*
**
***
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
L=1mH
Tc=25°C
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
Rating
40
±20
175
-55 to 175
322
1058
322
228
375
187
0.40
40
2373
Unit
V
V
°
C
°
C
A
A
A
A
W
W
°C/W
°C/W
Common Ratings
(Tc=25° Unless Otherwise Noted)
C
Mounted on Large Heat Sink
mJ
Repetitive rating；pulse width limited by max.junction temperature.
Surface mounted on FR-4 board.
Limited by T
J
max , starting T
J
=25°C,
L =
0.3mH,
R
G
= 25Ω, V
GS
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS=
0V
,I
DS
=250μA
Parameter
Test Conditions
HY4504
Min
40
-
-
2
-
-
-
-
-
Typ.
-
-
-
3
-
1.5
0.8
38
62
Max
-
1
50
4
±100
2.0
1.2
-
-
Unit
V
μA
μA
V
nA
mΩ
V
ns
nC
V
DS
=40V,V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
±20V,V
DS
=0V
V
GS
=10V,I
DS
=140A
I
SD
=140A,V
GS
=0V
I
SD
=140A,dI
SD
/dt
=100A/μs
Diode Characteristics
V
SD
*
t
rr
Q
rr
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2
V1.0
HY4504B6
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY4504
Min
-
-
-
-
-
V
DD
=20V,R
G
=4Ω,
I
DS
=140A,V
GS
=10V
-
-
-
-
-
-
Typ.
2.2
7966
1753
1112
35
20
45
62
208
33
83
Max
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=32V, V
GS
=10V,
I
D
=140A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=0V
,
V
DS
=0V,
F=1 MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
Ω
Gate Charge
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
www.hymexa.com
3
V1.0
HY4504B6
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
I
D
-Drain Current(A)
Tc-Case Temperature(℃)
Voltage
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
Normalized Transient
V
DS
-Drain-Source Voltage(V)
Z
θ
jc
I
D
-Drain Current(A)
Thermal
R
DS(ON)
-ON-Resistance(Ω)
Voltage
Impedance
Voltage
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
I
D
-Drain Current(A)
Voltage
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
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4
V1.0
HY4504B6
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance(
Figure 8: Source-Drain Diode Forward
I
S
-Source Current (A)
Tj-Junction Temperature (℃)
Voltage
Voltage
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
Voltage
V
DS
-Drain-Source Voltage (V)
Voltage
Q
G
-Gate Charge (nC)
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5
V1.0
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