HY3210P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
•
100V/120A
R
DS(ON)
= 6.8 mΩ (typ.) @ V
GS
=10V
Pin Description
•
•
•
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
G
D
S
G
D
S
S
D
TO-220FB-3L
TO-220FB-3M
TO-263-2L
G
D
S
Applications
•
•
Switching application
Power Management for Inverter Systems.
G
G
D
S
TO-3PS-3L
TO-3PS-3M
D
N-Channel MOSFET
S
Ordering and Marking Information
ÿ
YYXXXJWW G
P
HY3210
Package Code
ÿ
YYXXXJWW G
M
HY3210
ÿ
YYXXXJWW G
B
HY3210
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3M
PS: TO-3PS-3L
ÿ
YYXXXJWW G
PS
HY3210
ÿ
YYXXXJWW G
PM
HY3210
Assembly Material
G : Lead Free Device
HOOYI
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI
lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Note:
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, and
1
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141225
HY3210P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
100
±25
175
-55 to 175
120
480**
120
84
237
119
0.63
62.5
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
756***
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=80V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY3210
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=60A
I
SD
=60A, V
GS
=0V
I
SD
=60A, dl
SD
/dt=100A/µs
100
-
-
2.0
-
-
-
-
-
3.0
-
6.8
-
1
10
4.0
±100
8.5
V
µA
V
nA
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
46
98
1
-
-
V
ns
nC
2
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HY3210P/M/B/PS/PM
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY3210
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=50V, R
G
= 6
Ω,
I
DS
=60A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.7
4922
902
508
23
35
77
44
-
-
-
-
-
-
-
-
ns
pF
Ω
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
.
-
V
DS
=80V, V
GS
=10V,
I
DS
=60A
-
-
120
17
28
-
-
-
nC
Note * : Pulse test ; pulse width
≤300
µ
s, duty cycle≤2%.
3
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HY3210P/M/B/PS/PM
Typical Operating Characteristics
Power Dissipation
280
240
Drain Current
135
120
I
D
- Drain Current (A)
limited by package
105
90
75
60
45
30
15
P
tot
- Power (W)
200
160
120
80
40
0
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
o
0
T
C
=25 C,V
G
=10V
0
20
40 60 80 100 120 140 160 180
200
o
T
c
- Case Temperature (°C)
Safe Operation Area
600
T
c
- Case Temperature (°C)
I
D
- Drain Current (A)
100us
Rd
s(o
n)
Lim
it
100
1ms
10ms
10
DC
1
0.1
0.01
T
C
=25 C
o
0.1
1
10
100
500
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
o
R
θ
JA
: 62.5 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
S uare Wave Pulse Duration sec
4
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HY3210P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
160
140
120
9.5
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
V
GS
= 6,7,8,9,10V
5.5V
8.5
V =10V
GS
7.5
I
D
- Drain Current (A)
100
80
60
40
20
0
5V
4.5V
6.5
5.5
4.5
0
1
2
3
4
5
6
0
30
60
90
120
150
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
16
I
DS
=60A
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
14
12
10
8
6
4
4
5
6
7
8
9
10
Normalized Threshold Vlotage
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
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