HY1603P/B
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
•
•
30
V/62A,
R
DS(ON)
= 4.8mΩ (typ.) @ V
GS
=10V
Pin Description
100% EAS Guaranteed
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Halogen - Free Device Available
G
D
D
S
G
S
TO-220FB-3L
TO-263-2L
Applications
•
High Frequency Synchronous Buck
Converters for Computer Processor Power
D
•
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
G
N-Channel MOSFET
S
Ordering and Marking Information
ÿ
ÿ
YYXXXJWW G YYXXXJWW G
P
HY1603
B
HY1603
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
HOOYI
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI
lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Note:
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, and
1
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141225
HY1603P/B
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
c
=100°C
Parameter
Rating
30
±20
150
-55 to 150
62
248**
62
43
36
18
3
62.5
L=0.5mH
190***
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Mounted on Large Heat Sink
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
Note： * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=24V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY1603
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=31A
V
GS
=4.5V, I
DS
=31A
I
SD
=31A, V
GS
=0V
I
DS
=31A, dl
SD
/dt=100A/µs
30
-
-
1.5
-
-
-
-
-
-
1.9
-
4.8
6.4
-
1
30
2.5
±100
5.5
8
V
µA
V
nA
mΩ
mΩ
R
DS(ON)
*
Drain-Source On-state Resistance
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
21
13
1.1
-
-
V
ns
nC
2
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HY1603P/B
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY1603
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
L
=3.3
Ω,
I
DS
=31A, V
GS
=10 V,
R
G
=6Ω
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
2.4
1623
702
264
15
13
39
10
-
-
-
-
28
24
71
19
ns
pF
Ω
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=24V, V
GS
=10 V,
I
DS
=31A
-
-
-
28
4.9
6.1
-
-
-
nC
Note * : Pulse test ; pulse width
≤300
µ
s, duty cycle≤2%.
3
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HY1603P/B
Typical Operating Characteristics
Power Dissipation
40
72
Drain Current
I
D
- Drain Current (A)
P
tot
- Power (W)
35
60
30
48
25
36
20
15
T
C
=25 C
0
20
40
60
80 100 120 140 160 180 200
o
24
o
10
12
T
C
=25 C,V
G
=10V
0
20 40
60
80 100 120 140 160 180 200
T
c
- Case Temperature (°C)
Safe Operation Area
400
T
c
- Case Temperature (°C)
100
Rd
s(o
n)
Lim
it
I
D
- Drain Current (A)
100us
1ms
10
10ms
1
DC
0.1
0.01
T
C
=25 C
O
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
10
Duty = 0.5
Normalized Effective Transient
0.2
1
0.1
0.05
0.1
0.02
0.01
0.01
Single
Mounted on minimum pad
o
R
θ
JA
: 62.5 C/W
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
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HY1603P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
160
10
9
Drain-Source On Resistance
I
D
- Drain Current (A)
120
100
80
60
V
GS
= 4.5,5,6,7,8,9,10V
R
DS(ON)
- On - Resistance (mΩ)
140
8
7
6
5
4
3
2
1
V
GS
=10V
4V
3.5V
40
20
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
24
I
DS
=31A
Gate Threshold Voltage
1.6
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
20
Normalized Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
16
12
8
4
0
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
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