HY19P03P/B
P-Channel Enhancement Mode MOSFET
Feature Description
Pin Description
-30V/-90A
R
DS(ON)
= 4.7mΩ(typ.)@V
GS
=-10V
R
DS(ON)
= 6.5mΩ(typ.)@V
GS
=-4.5V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
S
GD
GD
S
TO-263-2L
TO-220FB-3L
Applications
Switching Application
Power Management for DC/DC
P-Channel MOSFET
Ordering and Marking Information
Package Code
P
B
P: TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G:lead Free Device
HY19P03
YYXXXJWW G
HY19P03
YYXXXJWW G
Note: H
lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
lead-free products meet or exceed the lead-Free require-
defines
“Green”
Nation finish;which are fully compliant with RoHS.
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -
oduct and/or to this document at any time without notice.
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1
V1.0
HY19P03P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(Tc=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Drain Current-Continuous
Tc=25°C
-30
±20
-55 to 150
-55 to 150
-90
V
V
°C
°C
A
Mounted on Large Heat Sink
I
DM
ID
Pulsed Drain Current *
Continuous Drain Current
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
P
D
R
JC
R
JA
E
AS
Note:
*
**
***
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
L=0.3mH
Tc=100°C
-390
-90
-69
96
38.5
1.3
62.5
218
A
A
A
W
W
°C/W
°C/W
mJ
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
Limited by T
J
max , starting T
J
=25°C,
L = 0.3mH, R
G
= 25Ω,
V
GS
=
-10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-state Resistance
V
GS=
0V
,I
DS
=-250uA
Parameter
Test Conditions
HY19P03
Min
-30
-
-
-1.0
-
-
Typ
-
-
-
-1.7
-
4.7
6.5
-
-
-
-0.82
40
74
Max
-
-1
-50
-3.0
±100
6
8
-1.3
-
-
Unit
V
uA
uA
V
nA
mΩ
mΩ
V
ns
nC
V
DS
=-30V,
V
GS
=0V
T
J
=100°C
V
DS
=V
GS
, I
DS
=-250uA
V
GS
=
20V,V
DS
=0V
V
GS
=-10V,I
D
= -45A
V
GS
=-4.5V,I
D
= -45A
I
SD
= -45A,V
GS
=0V
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= -45A,dI/dt=100A/us
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2
V1.0
HY19P03P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY19P03
Min
Typ
Max
Unit
Dynamic Characteristics
R
G
Ciss
Coss
Crss
t
d(ON)
T
r
t
d(OFF)
T
f
Qg
Qgs
Qgd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
= -24V, V
GS
= -10V
I
D
= -45A,
-
-
-
90
7.8
19.3
-
-
-
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -15V,R
G
=3
Ω,
I
DS
= -45A,V
GS
=-10V
V
GS
=0V
,
V
DS
=0V,
Frequency=1.0MHz
V
GS
=0V,
V
DS
=-25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.84
4787
461
323
12
16
75
37
-
-
-
-
-
-
-
-
ns
pF
Ω
Gate Charge
Note: *Pulse test; pulse width
≤
300us duty cycle
≤
2%
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3
V1.0
HY19P03P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
Tc-Case Temperature(
)
-I
D
-Drain Current(A)
Tc-Case Temperature( )j
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
Normalized Transient
Zθ jc
-I
D
-Drain Current(A)
Thermal
Impedance
-V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
R
DS(ON)
-ON-Resistance(mΩ)
Figure 5: Output Characteristics
-I
D
-Drain Current(A)
-V
DS
-Drain-Source Voltage (V)
-I
D
-Drain Current(A)
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4
V1.0
HY19P03P/B
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (
)
-I
S
-Source Current (A)
-V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
12
Figure 10: Gate Charge Characteristics
-V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
-V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
)
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5
V1.0
嵌入式系统
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