HY3203C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/120A
R
DS(ON)
= 1.9mΩ(typ.) @V
GS
= 10V
R
DS(ON)
= 2.5mΩ(typ.) @V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
Pin Description
D D D D
D D D D
S S S G
Pin1
PPAK5*6-8L
G S S S
Applications
Switching Application
Power Management for DC/DC
Battery Protection
N-Channel MOSFET
Ordering and Marking Information
Package Code
C2
C2:
PPAK5*6-8L
Date Code
YYXXX WW
Assembly Material
G:Halogen Free
HY3203
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HY3203C2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(Tc=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
Tc=25°C
30
±20
150
-55 to 150
120
V
V
°C
°C
A
Mounted on Large Heat Sink
I
DM
I
D
Pulsed Drain Current *
Continuous Drain Current
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
P
D
R
JC
R
JA
E
AS
Note:
Maximum Power Dissipation
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
L=0.1mH
Tc=100°C
480
120
80
52
21
2.4
45
322
A
A
A
W
W
°C/W
°C/W
mJ
* Repetitive rating pulse width limited by max.junction temperature.
** Surface mounted on 1in2 FR-4 board.
*** Limited by T
J
max , starting T
J
=25°C,
L =
0.1mH,
R
G
= 25Ω, V
GS
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
V
GS=
0V
,I
DS
=250μA
Parameter
Test Conditions
HY3203
Min
30
-
-
1
-
-
-
Typ.
-
-
-
1.4
-
1.9
2.5
Max
-
1
5
3
±100
2.4
3.2
Unit
V
μA
μA
V
nA
mΩ
V
DS
=30V,V
GS
=0V
T
J
=55°C
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
20V,V
DS
=0V
V
GS
=10V,I
DS
=20A
V
GS
=4.5V,I
DS
=20A
Diode Characteristics
V
SD
*
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=20A,V
GS
=0V
I
SD
=20A,dI
SD
/dt
=100A/μs
-
-
-
0.8
23
58
1.2
-
-
V
ns
nC
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2
V1.0
HY3203C2
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY3203
Min
-
-
-
-
-
V
DD
=20V,R
G
=3.3
Ω,
I
DS
=20A,V
GS
=10V
-
-
-
-
-
-
Typ.
1.9
4726
469
322
13
11
41
14
120
9
26
Max
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Characteristics
V
DS
=24V, V
GS
=10V,
I
D
=20A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS
=0V
,
V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
Ω
Gate Charge
Note: *Pulse test pulse width
≤
300us duty cycle
≤
2%
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3
V1.0
HY3203C2
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Power Dissipation (w)
Tc-Case Temperature(
)
I
D
-Drain Current(A)
Tc-Case Temperature( )
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
I
D
-Drain Current(A)
Normalized Transient
Z
jc
Thermal
Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 6: Drain-Source On Resistance
Figure 5: Output Characteristics
V
DS
-Drain-Source Voltage (V)
R
DS(ON)
-ON-Resistance(mΩ)
I
D
-Drain Current(A)
I
D
-Drain Current(A)
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4
V1.0
HY3203C2
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Normalized On-Resistance
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (
)
I
S
-Source Current (A)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
GS
-Gate-Source Voltage (V)
C-Capacitance(pF)
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
)
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5
V1.0
微控制器 MCU
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